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參數(shù)資料
| 型號： | AUIRF7738L2TR1 |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 40 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-7 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 294K |
| 代理商： | AUIRF7738L2TR1 |
www.irf.com
1
AUIRF7738L2TR
AUIRF7738L2TR1
AUTOMOTIVE GRADE
HEXFET is a registered trademark of International Rectifier.
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and
Reliability
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
11/5/10
DirectFET ISOMETRIC
L6
SB
SC
M2
M4
L4
L6
L8
DD
G
S
Description
The AUIRF7738L2 combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging
technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.The DirectFET
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET
Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET packaging
platform coupled with the latest silicon technology allows the AUIRF7738L2 to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable
device for high current automotive applications.
V(BR)DSS
40V
RDS(on) typ.
1.2m
max.
1.6m
ID (Silicon Limited)
184A
Qg
129nC
Parameter
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
g
PD @TC = 25°C
Power Dissipation
f
PD @TA = 25°C
Power Dissipation
e
EAS
Single Pulse Avalanche Energy (Thermally Limited)
h
EAS (tested)
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
g
A
EAR
Repetitive Avalanche Energy
g
mJ
TP
Peak Soldering Temperature
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
e
–––
45
RθJA
Junction-to-Ambient
j
12.5
–––
RθJA
Junction-to-Ambient
k
20
–––
RθJCan
Junction-to-Can
fl
–––
1.6
RθJ-PCB
Junction-to-PCB Mounted
–––
0.5
Linear Derating Factor
f
W/°C
Max.
184
130
736
538
134
40
± 20
315
0.63
35
94
3.3
270
-55 to + 175
See Fig.18a, 18b, 16, 17
V
A
mJ
°C/W
W
°C
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
PD - 96333A
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| AUIRF7749L2TR | 功能描述:MOSFET NCH 60V 36A DIRECTFET 制造商:infineon technologies 系列:汽車級，AEC-Q101，OptiMOS? 包裝:剪切帶（CT） 零件狀態(tài):在售 FET 類型:N 溝道 技術(shù):MOSFET (Metal Oxide) 漏源極電壓（Vdss）:60V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:36A（Ta），345A（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:1.5 毫歐 @ 120A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:4V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:275nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:10655pF @ 25V FET 功能:- 功率耗散（最大值）:* 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:DirectFET? 等距 L8 供應(yīng)商器件封裝:DIRECTFET L8 標(biāo)準(zhǔn)包裝:1 |
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