參數(shù)資料
型號(hào)： AUIRGP50B60PD1
元件分類： IGBT 晶體管
英文描述： 60 A, 600 V, N-CHANNEL IGBT, TO-247AC
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/13頁(yè)
文件大?。?/td> 418K
代理商： AUIRGP50B60PD1
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
AUIRGP50B60PD1
05/12/10
Features
Low VCE(ON) NPT Technology, Positive Temperature
Coefficient
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
Automotive Qualified *
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
E
G
n-channel
C
VCES = 600V
VCE(on) typ. = 2.00V
@ VGE = 15V IC = 33A
Equivalent MOSFET
Parameters
RCE(on) typ. = 61m
ID (FET equivalent) = 50A
Applications
Automotive HEV and EV
PFC and ZVS SMPS Circuits
TO-247AC
G
C
E
www.irf.com
1
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
AUTOMOTIVE GRADE
GC
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
75
h
IC @ TC = 100°C
Continuous Collector Current
45
ICM
Pulse Collector Current (Ref. Fig. C.T.4)
150
ILM
Clamped Inductive Load Current
d
150
A
IF @ TC = 25°C
Diode Continous Forward Current
40
IF @ TC = 100°C
Diode Continous Forward Current
15
IFRM
Maximum Repetitive Forward Current
e
60
VGE
Gate-to-Emitter Voltage
±20
V
PD @ TC = 25°C
Maximum Power Dissipation
390
W
PD @ TC = 100°C
Maximum Power Dissipation
156
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
°C
Soldering Temperature for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbfin (1.1 Nm)
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
–––
0.32
°C/W
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
–––
1.7
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
–––
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
40
Weight
–––
6.0 (0.21)
–––
g (oz)
PD - 96306
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