參數(shù)資料
型號： AUIRGP50B60PD1
元件分類： IGBT 晶體管
英文描述： 60 A, 600 V, N-CHANNEL IGBT, TO-247AC
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù)： 6/13頁
文件大?。?/td> 418K
代理商： AUIRGP50B60PD1
AUIRGP50B60PD1
2
www.irf.com
Notes:
RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 15V, L = 28 H, RG = 22 .
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed capacitance that stores the
same energy as Coes while VCE is rising from 0 to 80% VCES.
Calculated continuous current based on maximum allowable junction temperature. Package current limit is 60A. Note that current limitations arising from heating of
the device leads may occur with some lead mounting arrangements.
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Conditions
Ref.Fig
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
——V
VGE = 0V, IC = 500A
V(BR)CES/TJ
Temperature Coeff. of Breakdown Voltage
—0.31
—
V/°C VGE = 0V, IC = 1mA (25°C-125°C)
RG
Internal Gate Resistance
—
1.7
—
1MHz, Open Collector
—2.00
2.35
IC = 33A, VGE = 15V
4, 5,6,8,9
VCE(on)
Collector-to-Emitter Saturation Voltage
—
2.45
2.85
V
IC = 50A, VGE = 15V
—2.60
2.95
IC = 33A, VGE = 15V, TJ = 125°C
—3.20
3.60
IC = 50A, VGE = 15V, TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0
4.0
5.0
V
IC = 250A
7,8,9
VGE(th)/TJ
Threshold Voltage temp. coefficient
—
-10
—
mV/°C VCE = VGE, IC = 1.0mA
gfe
Forward Transconductance
—
41
—
S
VCE = 50V, IC = 33A, PW = 80s
ICES
Collector-to-Emitter Leakage Current
—
5.0
500
A
VGE = 0V, VCE = 600V
—1.0
—
mA VGE = 0V, VCE = 600V, TJ = 125°C
VFM
Diode Forward Voltage Drop
—
1.30
1.70
V
IF = 15A, VGE = 0V
10
—1.20
1.60
IF = 15A, VGE = 0V, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
—
±100
nA
VGE = ±20V, VCE = 0V
Static or Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Ref.Fig
Qg
Total Gate Charge (turn-on)
—
205
308
IC = 33A
17
Qgc
Gate-to-Collector Charge (turn-on)
—
70
105
nC VCC = 400V
CT1
Qge
Gate-to-Emitter Charge (turn-on)
—
30
45
VGE = 15V
Eon
Turn-On Switching Loss
—
255
305
IC = 33A, VCC = 390V
CT3
Eoff
Turn-Off Switching Loss
—
375
445
J
VGE = +15V, RG = 3.3, L = 200H
Etotal
Total Switching Loss
—
630
750
TJ = 25°C
f
td(on)
Turn-On delay time
—
30
40
IC = 33A, VCC = 390V
CT3
tr
Rise time
—
10
15
ns
VGE = +15V, RG = 3.3, L = 200H
td(off)
Turn-Off delay time
—
130
150
TJ = 25°C
f
tf
Fall time
—
11
15
Eon
Turn-On Switching Loss
—
580
700
IC = 33A, VCC = 390V
CT3
Eoff
Turn-Off Switching Loss
—
480
550
J
VGE = +15V, RG = 3.3, L = 200H
11,13
Etotal
Total Switching Loss
—
1060
1250
TJ = 125°C f
WF1,WF2
td(on)
Turn-On delay time
—
26
35
IC = 33A, VCC = 390V
CT3
tr
Rise time
—
13
20
ns
VGE = +15V, RG = 3.3, L = 200H
12,14
td(off)
Turn-Off delay time
—
146
165
TJ = 125°C
f
WF1,WF2
tf
Fall time
—
15
20
Cies
Input Capacitance
—
3648
—
VGE = 0V
16
Coes
Output Capacitance
—
322
—
VCC = 30V
Cres
Reverse Transfer Capacitance
—
56
—
pF
f = 1Mhz
Coes eff.
Effective Output Capacitance (Time Related)
g
—215
—
VGE = 0V, VCE = 0V to 480V
15
Coes eff. (ER) Effective Output Capacitance (Energy Related) g
—163
—
TJ = 150°C, IC = 150A
3
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
CT2
Rg = 22
, VGE = +15V to 0V
trr
Diode Reverse Recovery Time
—
42
60
ns
TJ = 25°C
IF = 15A, VR = 200V,
19
—74
120
TJ = 125°C
di/dt = 200A/s
Qrr
Diode Reverse Recovery Charge
—
80
180
nC TJ = 25°C
IF = 15A, VR = 200V,
21
—
220
600
TJ = 125°C
di/dt = 200A/s
Irr
Peak Reverse Recovery Current
—
4.0
6.0
A
TJ = 25°C
IF = 15A, VR = 200V,
19,20,21,22
—6.5
10
TJ = 125°C
di/dt = 200A/s
CT5
Conditions
相關(guān)PDF資料
PDF描述
AVT-51663-BLKG 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AVT-51663-TR1G 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AWE6159RM46P8 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
AWL6153M7UQ1 2400 MHz - 2485 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
AWL6153M7UP6 2400 MHz - 2485 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AUIRGP50B60PD1E 功能描述:IGBT 晶體管 600V AUTO WARP2 150KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
AUIRGP65A40D0 功能描述:DISCRETES 制造商:infineon technologies 系列:* 零件狀態(tài):有效 標準包裝:25
AUIRGP65G40D0 功能描述:IGBT 600V 62A 625W Through Hole TO-247AC 制造商:infineon technologies 系列:CooliRIGBT? 包裝:管件 零件狀態(tài):有效 IGBT 類型:- 電壓 - 集射極擊穿（最大值）:600V 電流 - 集電極（Ic）（最大值）:62A 脈沖電流 - 集電極 (Icm):84A 不同?Vge，Ic 時的?Vce（on）:2.2V @ 15V，20A 功率 - 最大值:625W 開關(guān)能量:298μJ（開），147μJ（關(guān)） 輸入類型:標準 柵極電荷:270nC 25°C 時 Td（開/關(guān)）值:35ns/142ns 測試條件:400V，20A，4.7歐姆，15V 反向恢復(fù)時間（trr）:41ns 封裝/外殼:TO-247-3 安裝類型:通孔 供應(yīng)商器件封裝:TO-247AC 標準包裝:25
AUIRGP66524D0 功能描述:IGBT 600V 60A 214W Through Hole TO-247AC 制造商:infineon technologies 系列:- 包裝:管件 零件狀態(tài):有效 IGBT 類型:- 電壓 - 集射極擊穿（最大值）:600V 電流 - 集電極（Ic）（最大值）:60A 脈沖電流 - 集電極 (Icm):72A 不同?Vge，Ic 時的?Vce（on）:1.9V @ 15V，24A 功率 - 最大值:214W 開關(guān)能量:915μJ（開），280μJ（關(guān)） 輸入類型:標準 柵極電荷:80nC 25°C 時 Td（開/關(guān)）值:30ns/75ns 測試條件:400V，24A，10 歐姆，15V 反向恢復(fù)時間（trr）:176ns 封裝/外殼:TO-247-3 安裝類型:通孔 供應(yīng)商器件封裝:TO-247AC 標準包裝:25
AUIRGP76524D0 功能描述:DIODE IGBT 680V 24A TO-247AC 制造商:infineon technologies 系列:* 零件狀態(tài):有效 標準包裝:25
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*