參數(shù)資料
型號(hào)： AUIRLR2703TR
元件分類： JFETs
英文描述： 20 A, 30 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： ROHS COMPLIANT, PLASTIC, DPAK-3
文件頁數(shù)： 5/12頁
文件大?。?/td> 276K
代理商： AUIRLR2703TR
AUIRLR2703
2
www.irf.com
S
D
G
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L =570H
RG = 25, IAS = 14A. (See Figure 12)
ISD ≤ 14A, di/dt ≤ 140A/s, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 300s; duty cycle ≤ 2%.
Notes:
Caculated continuous current based on maximum allowable
junction temperature. Package limitation current = 20A.
This is applied for I-PAK, LS of D-PAK is measured
between lead and center of die contact.
Uses IRL2703 data and test conditions.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.030
–––
V/°C
–––
––– 0.045
–––
––– 0.065
VGS(th)
Gate Threshold Voltage
1.0
–––
V
gfs
Forward Transconductance
6.4
–––
S
IDSS
Drain-to-Source Leakage Current
–––
25
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
15
Qgs
Gate-to-Source Charge
–––
4.6
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
9.3
td(on)
Turn-On Delay Time
–––
8.5
–––
tr
Rise Time
–––
140
–––
td(off)
Turn-Off Delay Time
–––
12
–––
ns
tf
Fall Time
–––
20
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH 6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
g
Ciss
Input Capacitance
–––
450
–––
Coss
Output Capacitance
–––
210
–––
Crss
Reverse Transfer Capacitance
–––
110
–––
pF
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
23
g
(Body Diode)
A
ISM
Pulsed Source Current
–––
96
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
65
97
ns
Qrr
Reverse Recovery Charge
–––
140
210
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
RDS(on)
Static Drain-to-Source On-Resistance
TJ = 25°C, IS = 14A, VGS = 0V f
TJ = 25°C, IF = 14A
di/dt = 100A/s
fi
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 14A f
VDS = VGS, ID = 250A
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 24V
Conditions
VGS = 4.5V, RD = 1.1 fi
VGS = 0V
VDS = 25V
= 1.0MHz
i
VGS = 4.5V fi
VDD = 15V
ID = 14A
RG = 12
VGS = 4.5V, ID = 12A f
VDS = 25V, ID = 14A i
ID = 14A
VGS = 16V
VGS = -16V
Conditions
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