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參數(shù)資料
| 型號： | AUIRLS4030-7TRR |
| 元件分類： | JFETs |
| 英文描述： | 190 A, 100 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, D2PAK-7 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 339K |
| 代理商： | AUIRLS4030-7TRR |
08/15/11
www.irf.com
1
HEXFET Power MOSFET
S
D
G
AUIRLS4030-7P
GD
S
Gate
Drain
Source
D2Pak 7 Pin
AUIRLS4030-7P
G
VDSS
100V
RDS(on) typ.
3.2mΩ
max.
3.9mΩ
ID
190A
S
D
S
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Description
Features
l
Optimized for Logic Level Drive
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
AUTOMOTIVE GRADE
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited) d
mJ
IAR
Avalanche Current c
A
EAR
Repetitive Avalanche Energy f
mJ
dv/dt
Peak Diode Recovery
e
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
jk
–––
0.40
°C/W
RθJA
Junction-to-Ambient (PCB Mount)
ij
–––
40
300
Max.
190
130
750
320
See Fig. 14, 15, 22a, 22b
370
13
-55 to + 175
± 16
2.5
10lbf
xin (1.1Nxm)
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
PD - 96399
相關PDF資料 |
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|---|---|
| AUIRLS4030-7TRL | 190 A, 100 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRLS4030 | 180 A, 100 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRLS4030TRL | 180 A, 100 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRLSL4030 | 180 A, 100 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRLS4030TRR | 180 A, 100 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRLS4030TRL | 功能描述:MOSFET 100V 180A 4.3 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRLS4030TRR | 功能描述:MOSFET 100V 180A 4.3 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRLS8409-7P | 功能描述:MOSFET NCH 40V 240A D2PAK 制造商:infineon technologies 系列:汽車級，AEC-Q101，HEXFET? 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:40V 電流 - 連續(xù)漏極（Id）（25°C 時）:240A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:0.75 毫歐 @ 100A，10V 不同 Id 時的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:266nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:16488pF @ 25V 功率 - 最大值:375W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-263-7，D2Pak（6 引線+接片） 供應商器件封裝:D2PAK（7-Lead） 標準包裝:50 |
| AUIRLS8409-7TRL | 功能描述:MOSFET NCH 40V 240A D2PAK 制造商:infineon technologies 系列:* 包裝:帶卷（TR） 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:40V 電流 - 連續(xù)漏極（Id）（25°C 時）:240A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:0.75 毫歐 @ 100A，10V 不同 Id 時的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:266nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:16488pF @ 25V 功率 - 最大值:375W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-263-7，D2Pak（6 引線+接片） 供應商器件封裝:D2PAK（7-Lead） 標準包裝:800 |
| AUIRLSL3036 | 功能描述:MOSFET 60V 270A 2.4 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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