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參數(shù)資料
| 型號： | AWT6310RM23P9 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 5 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, M23, 12 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 361K |
| 代理商： | AWT6310RM23P9 |
09/2008
AWT6310R
Dual-band CDMA/PCS 3.4 V/28 dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.0
M23 Package
12 Pin 3 mm x 5 mm x 1 mm
Surface Mount Module
FEATURES
Single Mode Operation: POUT +28 dBm
High Efficiency: 39 %
25 % Package Size Reduction
Common VMODE Control Line
Simplified VCC Bus PCB routing
Reduced External Component Count
Low Profile Surface Mount Package: 1.1 mm
RoHS Compliant Package, 250 oC MSL-3
APPLICATIONS
CDMA/EVDO Cell & PCS dual-band Wireless
Handsets and Data Devices
PRODUCT DESCRIPTION
The AWT6310R meets the increasing demands for
higher levels of integration in dual-band CDMA/PCS
1X handsets, while reducing board area requirements
by 25 %. The package pinout was chosen to enable
handset manufacturers to easily route VCC to both
power amplifiers and simplify control with a common
VMODE pin. The device is manufactured on an advanced
InGaP HBT MMIC technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
Selectable bias modes that optimize efficiency for
different output power levels, and a shutdown mode
with low leakage current, serve to increase handset
talk and standby time. The self contained 3 mm x 5 mm
x 1 mm surface mount package incorporates matching
networks optimized for output power, efficiency and
linearity in a 50 system.
Figure 1: Block Diagram
AWT6310R
Bias Control
VREF_CELL
VCC1
RFIN_CELL
RFOUT_CELL
VCC2
VMODE
1
11
9
12
10
3
4
2
GND
VCC2 A
5
6
8
7
Bias Control
GND
RFOUT_PCS
VREF_PCS
RFIN_PCS
GND at slug (pad)
GND
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