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參數(shù)資料
| 型號： | BAP27-01 |
| 英文描述： | Non-Volatile Static RAM (nvSRAM); Organization: 8x8; Density: 64KB; Speed: 45ns; Supply Voltage: 5V; Temperature Range: 0° to +70°C; Package: 28-SOIC |
| 中文描述： | 硅PIN二極管 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 75K |
| 代理商： | BAP27-01 |
2001 Nov 01
3
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP27-01
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
I
R
C
d
forward voltage
reverse current
diode capacitance
I
F
= 50 mA
V
R
= 20 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 5 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
I
F
= 0.5 mA; f = 900 MHz
I
F
= 0.5 mA; f = 1800 MHz
I
F
= 0.5 mA; f = 2450 MHz
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at I
R
= 3 mA
0.95
0.45
0.35
0.27
1.6
1.2
0.7
0.6
12.3
7.7
6.0
0.17
0.19
0.21
0.13
0.15
0.18
0.08
0.11
0.14
0.06
0.10
0.12
0.17
1.1
20
0.45
0.32
2.5
2.0
1.2
0.95
V
nA
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
μ
s
r
D
diode forward resistance
|
s
21
|
2
isolation
|
s
21
|
2
insertion loss
|
s
21
|
2
insertion loss
|
s
21
|
2
insertion loss
|
s
21
|
2
insertion loss
τ
L
charge carrier life time
L
S
series inductance
0.6
nH
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
190
K/W
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