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參數(shù)資料
| 型號(hào)： | BAP27-01 |
| 英文描述： | Non-Volatile Static RAM (nvSRAM); Organization: 8x8; Density: 64KB; Speed: 45ns; Supply Voltage: 5V; Temperature Range: 0° to +70°C; Package: 28-SOIC |
| 中文描述： | 硅PIN二極管 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 75K |
| 代理商： | BAP27-01 |
2001 Nov 01
4
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP27-01
GRAPHICAL DATA
0.1
1
10
0.1
1
10
100
I
F
(mA)
r
D
(
)
Fig.2
Forward resistance as a function of forward
current; typical values.
f = 100 MHz; T
j
= 25
°
C.
0
100
200
300
400
500
0
4
8
12
16
20
V
R
(V)
C
d
(pF)
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
°
C.
-0.5
-0.4
-0.3
-0.2
-0.1
0
0
1
2
3
f (GHz)
|s
21
|
2
(dB)
(3)
(2)
(1)
(4)
Fig.4
Insertion loss (
|
s
21
|
2
) of the diode as a
function of frequency; typical values.
Diode inserted in series with a 50
stripline circuit and biased
via the analyzer Tee network. T
amb
= 25
°
C.
(1) I
F
= 0.5 mA.
(2) I
F
= 1 mA.
(3) I
F
= 10 mA.
(4) I
F
= 100 mA.
-40
-30
-20
-10
0
0
1
2
3
f (GHz)
|s
21
|
2
(dB)
Fig.5
Isolation (
|
s
21
|
2
) of the diode as a function of
frequency; typical values.
Diode zero biased and inserted in series with a 50
stripline circuit.
T
amb
= 25
°
C.
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