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參數(shù)資料
| 型號： | BAS221 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | General purpose diode(通用二極管) |
| 中文描述： | 0.3 A, 250 V, SILICON, SIGNAL DIODE |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 53K |
| 代理商： | BAS221 |
1999 May 07
2
Philips Semiconductors
Product specification
General purpose diode
BAS221
FEATURES
Small ceramic SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage:
max. 200 V
Repetitive peak reverse voltage:
max. 250 V
Repetitive peak forward current:
max. 1 A.
APPLICATIONS
General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS221 is a general purpose diode fabricated in planar technology, and
encapsulated in the ceramic SOD110 package.
Fig.1 Simplified outline (SOD110) and symbol.
handbook, 4 columns
MAM139
k
a
cathode mark
top view
side view
bottom view
k
Marking code:
JS.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
250
200
300
1
V
V
mA
A
note 1; see Fig.2
t
p
< 0.5 ms;
δ ≤
0.25
square wave; T
j
= 25
°
C prior to
surge; see Fig.4
t = 1
μ
s
t = 100
μ
s
t = 10 ms
T
amb
= 25
°
C; note 1
65
20
7
2
400
+150
150
A
A
A
mW
°
C
°
C
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAS221,115 | 制造商:NXP Semiconductors 功能描述: |
| BAS23W | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:USM PACKAGE |
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| BAS-25A71 (C2A-RED) | 制造商:n/a 功能描述:item#068758/ ZZBEPBAS25A71 |
| BAS-25A71(C2A-RED)CUSTOM | 制造商:DUO 功能描述:ZZBEPBAS25A71 |
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