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參數(shù)資料
| 型號： | BAS221 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | General purpose diode(通用二極管) |
| 中文描述： | 0.3 A, 250 V, SILICON, SIGNAL DIODE |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 53K |
| 代理商： | BAS221 |
1999 May 07
5
Philips Semiconductors
Product specification
General purpose diode
BAS221
Fig.5
Reverse current as a function of junction
temperature.
handbook, halfpage
IR
(
μ
A)
10
200
0
MBG381
100
Tj (
o
C)
1
10
2
10
1
(1)
(2)
(1) V
R
= V
Rmax
; maximum values.
(2) V
R
= V
Rmax
; typical values.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
°
C.
handbook, halfpage
Cd
(pF)
0
4
8
6
2
0.8
0.2
0.6
0.4
MBG447
VR (V)
Fig.7 Reverse recovery time and waveforms.
(1) I
R
= 3 mA.
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty factor
δ
= 0.05.
Oscilloscope: rise time t
r
= 0.35 ns.
Circuit capacitance C
≤
1 pF (oscilloscope input + parasitic capacitance).
handbook, full pagewidth
trr
(1)
IF
t
output signal
tr
t
tp
10%
90%
VR
input signal
V = VR
F
S
S
IF
D.U.T.
Ri
SAMPLING
OSCILLOSCOPE
MGA881
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