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參數(shù)資料
| 型號(hào)： | BAX18 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | General purpose diode |
| 中文描述： | 0.5 A, 75 V, SILICON, SIGNAL DIODE, DO-35 |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 32K |
| 代理商： | BAX18 |
1996 Sep 18
2
Philips Semiconductors
Product specification
General purpose diode
BAX18
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
Switching speed: max. 50 ns
General application
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 75 V
Repetitive peak forward current:
max. 2 A.
APPLICATIONS
Rectifier applications.
DESCRIPTION
The BAX18 is a general purpose diode fabricated in planar technology, and
encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diode is type branded.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
75
75
V
V
mA
mA
see Fig.2; note 1
500
2000
square wave; T
j
= 25
°
C prior to
surge; see Fig.4
t = 1
μ
s
t = 100
μ
s
t = 10 ms
T
amb
= 25
°
C; note 1
55
15
A
A
A
mW
°
C
°
C
9
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
450
+200
200
65
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