參數(shù)資料
型號(hào): BAX18
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: General purpose diode
中文描述: 0.5 A, 75 V, SILICON, SIGNAL DIODE, DO-35
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 32K
代理商: BAX18
1996 Sep 18
3
Philips Semiconductors
Product specification
General purpose diode
BAX18
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 300 mA
I
F
= 2 A; T
j
= 150
°
C
see Fig.5
V
R
= 75 V
V
R
= 75 V; T
j
= 150
°
C
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
;
measured at I
R
= 3 mA; see Fig.7
1.0
1.5
V
V
I
R
reverse current
5
μ
A
μ
A
pF
ns
100
35
50
C
d
t
rr
diode capacitance
reverse recovery time
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length 10 mm
lead length 10 mm; note 1
240
375
K/W
K/W
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