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| 型號(hào)： | BC214C |
| 英文描述： | FPGA Logic IC; Logic Type:Programmable; No. of Macrocells:136; Package/Case:484-FBGA |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 30V的五（巴西）總裁| 100mA的一（c）|至92 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 68K |
| 代理商： | BC214C |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC212, BC212A, BC212B
BC213, BC213A, BC213B,
BC213C
BC214, BC214B, BC214C
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25oC Unless Specified Otherwise)
DESCRIPTION
Collector Emitter Voltage
BC212
BC213, BC214
Collector Base Voltage
BC212
BC213, BC214
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
BC212, BC213
BC214
BC212
BC213
BC214
BC212, BC214
BC213
Collector Emitter Saturation Voltage
SYMBOL TEST CONDITION
V
CEO
I
C
=2mA,I
B
=0
MIN
TYP
MAX
UNITS
50
30
V
V
V
CBO
I
C
=10
μ
A.I
E
=0
60
45
5
V
V
V
nA
nA
V
EBO
I
CBO
I
EBO
I
E
=10
μ
A, I
C
=0
V
CB
=30V,I
E
=0
V
EB
=4V, I
C
=0
15
15
h
FE
I
C
=10
μ
A,V
CE
=5V
40
100
60
80
140
I
C
=2mA,V
CE
=5V
600
I
C
=100mA,V
CE
=5V*
120
140
0.10
0.25
1.00
0.62
V
CE(sat)
I
C
=10mA,I
B
=0.5mA
I
C
=100mA,I
B
=5mA*
I
C
=100mA,I
B
=5mA*
I
C
=2mA,V
CE
=5V
V
V
V
V
0.6
1.4
0.72
Base Emitter Saturation Voltage
Base Emitter On Voltage
V
BE(sat)
V
BE(on)
0.6
ELECTRICAL CHARACTERISTICS (Ta=25oC Unless Specified Otherwise)
DESCRIPTION
DYNAMICS CHARACTERISTICS
Transition Frequency
BC212
BC213
BC214
Output Capacitance
Noise Figure
BC212, BC213
SYMBOL TEST CONDITION
MIN
TYP
MAX
UNITS
f
T
I
C
=10mA, V
CE
=5V
f=50MHz
280
360
320
MHz
MHz
MHz
pF
C
ob
V
CB
=10V, I
E
=0
6
NF
I
C
=200
μ
A, V
CE
=5V
R
S
=2KW f=1KHz
f=200H
Z
I
C
=200
μ
A, V
CE
=5V
R
S
=2KW f=30Hz
to 15KHz
10
dB
BC214
NF
2
dB
Small Signal Current Gain
BC212
BC213
BC214
| h
fe
|
I
C
=2mA, V
CE
=5V
f=1KH
Z
60
80
140
100
200
350
A
B
C
300
400
600
*Pulse Condition: Pulse Width 300us, Duty Cycle 2%.
Continental Device India Limited
Data Sheet
Page 2 of 4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BC214 | COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & SWITCHES |
| BC214L | COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & SWITCHES |
| BC2I4 | COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & DRIVERS |
| BC2I4L | COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & DRIVERS |
| BCI84 | COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & DRIVERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC214K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 200MA I(C) | TO-92 |
| BC214KA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 200MA I(C) | TO-92 |
| BC214KB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 200MA I(C) | TO-92 |
| BC214KC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 200MA I(C) | TO-92 |
| BC214L | 功能描述:兩極晶體管 - BJT PNP -30V -500mA HFE/400 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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