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參數(shù)資料
| 型號： | BC849 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN general purpose transistor |
| 中文描述： | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 46K |
| 代理商： | BC849 |
1999 Apr 08
6
Philips Semiconductors
Product specification
NPN general purpose transistors
BC849; BC850
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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PDF描述 |
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| BC850 | NPN general purpose transistors |
| BC850 | SOT23 NPN SILICON PLANAR |
| BC850B-2FZ | SOT23 NPN SILICON PLANAR |
| BC850C-Z2G | SOT23 NPN SILICON PLANAR |
| BC850 | Surface mount Si-Epitaxial PlanarTransistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC849AMTF | 功能描述:兩極晶體管 - BJT SOT-23 NPN GP AMP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC849AW RF | 功能描述:兩極晶體管 - BJT Transistor 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC849AW RFG | 功能描述:TRANSISTOR, NPN, 30V, 0.1A, 110A 制造商:taiwan semiconductor corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):在售 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:100mA 電壓 - 集射極擊穿（最大值）:30V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:600mV @ 5mA，100mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:110 @ 2mA，5V 功率 - 最大值:200mW 頻率 - 躍遷:100MHz 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應商器件封裝:SOT-323 標準包裝:3,000 |
| BC849B | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-23 制造商:ON Semiconductor 功能描述:TRANSISTOR NPN SOT-23 制造商:Infineon Technologies AG 功能描述:INF NPN transistor,BC849B 0.1A Ic 5Vce |
| BC849B /T3 | 功能描述:兩極晶體管 - BJT TRANS LOW NOISE TAPE-11 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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