參數(shù)資料
型號: BD6231F-E2F8
元件分類: 運(yùn)動控制電子
英文描述: BRUSH DC MOTOR CONTROLLER, 1 A, PDSO8
封裝: ROHS COMPLIANT, SOP-8
文件頁數(shù): 6/17頁
文件大?。?/td> 383K
代理商: BD6231F-E2F8
Technical Note
14/16
BD6230, BD6231, BD6232, BD6235, BD6236, BD6237
www.rohm.com
2009.08 - Rev.C
c
2009 ROHM Co., Ltd. All rights reserved.
11) Testing on application boards
When testing the IC on an application board, connecting a capacitor to a low impedance pin subjects the IC to stress.
Therefore, always discharge capacitors after each process or step. Always turn the IC's power supply off before
connecting it to or removing it from the test setup during the inspection process. Ground the IC during assembly steps
as an antistatic measure. Use similar precaution when transporting or storing the IC.
12) Switching noise
When the operation mode is in PWM control or VREF control, PWM switching noise may effects to the control input
pins and cause IC malfunctions. In this case, insert a pulled down resistor (10k is recommended) between each
control input pin and ground.
13) Regarding the input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements, in order to keep them
isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, as well as operating malfunctions and physical damage. Therefore, do not use methods by
which parasitic diodes operate, such as applying a voltage lower than the GND (P substrate) voltage to an input pin.
Ordering part number
B
D
6
2
3
2
F
P
-
E
2
ROHM part
number
Type
1X: 7V max.
2X: 18V max.
3X: 36V max.
X0: 1ch/0.5A X5:
2ch/0.5A
X1: 1ch/1A
X6: 2ch/1A
X2 1 h/2A
X7 2 h/2A
Package
F: SOP8
FP: HSOP25
FM: HSOP-M28
HFP: HRP7
Packaging spec.
E2: Embossed taping
(SOP8/HSOP25/HSOP-M28)
TR: Embossed taping
(HRP7)
Resistor
Transistor (NPN)
N
P
+
P
+
P
P substrate
GND
Parasitic element
Pin A
N
P
+
P
+
P
P substrate
GND
Parasitic element
Pin B
C
B
E
N
GND
Pin A
Pin B
Other adjacent elements
E
B
C
GND
Parasitic
element
Appendix: Example of monolithic IC structure
Parasitic
element
相關(guān)PDF資料
PDF描述
BD826 1 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-202
BDV64 12 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-218
BF-4000622 24 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT
BF-4001222 48 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT
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