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參數(shù)資料
| 型號： | BD670 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 中文描述： | 互補(bǔ)性的芯片功率達(dá)林頓晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 87K |
| 代理商： | BD670 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
3.12
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CE
= rated V
CBO
V
CE
= rated V
CBO
T
C
= 100
o
C
0.2
2
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
Collector-Emitter
Sustaining Voltage
V
CE
= half rated V
CEO
0.5
mA
I
EBO
V
EB
= 5 V
2
mA
V
CEO(sus)
I
C
= 50 mA
for
BD677/677A/678/678A
for
BD679/679A/680/680A
for
BD681/682
60
80
100
V
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
for
BD677/678/679/680/681/682
I
C
= 1.5 A
I
B
= 30 mA
for
BD677A/678A/679A/680A
I
C
= 2 A
I
B
= 40 mA
for
BD677/678/679/680/681/682
I
C
= 1.5 A
V
CE
= 3 V
for
BD677A/678A/679A/680A
I
C
= 2 A
V
CE
= 3 V
2.5
2.8
V
V
V
BE
Base-Emitter Voltage
2.5
2.5
V
V
h
FE
DC Current Gain
for
BD677/678/679/680/681/682
I
C
= 1.5 A
V
CE
= 3 V
for
BD677A/678A/679A/680A
I
C
= 2 A
V
CE
= 3 V
750
750
h
fe
Small Signal Current
Gain
I
C
= 1.5 A
V
CE
= 3 V
f = 1MHz
1
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Safe OperatingAreas
DeratingCurve
BD677/677A/678/678A/679/679A/680/680A/681/682
2/6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BD677 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| BD679 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| BD679A | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| BD677A | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| BD678 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
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