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參數(shù)資料
| 型號： | BDS11 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| 中文描述： | 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-257AB |
| 封裝： | HERMETIC SEALED, METAL, TO-220M, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 47K |
| 代理商： | BDS11 |
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukDocument Number 3254
Issue 2
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
BDS10
BDS11
BDS12
BDS10SMD
BDS11SMD
BDS12SMD
BDS10SMD05
BDS11SMD05
BDS12SMD05
Parameter
Test Conditions
BDS10
BDS11
BDS12
BDS10
BDS11
BDS12
Min.
Typ.
Max.
500
500
500
1
1
1
Unit
V
CB
= 60V
V
CB
= 80V
V
CB
= 100V
V
CE
= 30V
V
CE
= 40V
V
CE
= 50V
V
EB
= 5V
BDS10
BDS11
BDS12
I
C
= 5A
I
C
= 10A
I
C
= 100mA
I
B
= 0.5A
I
B
= 2.5A
I
C
= 10A
I
B
= 2.5A
I
C
= 5A
I
C
= 0.5A
I
C
= 5A
I
C
= 10A
I
C
= 0.5A
f = 1MHz
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
1
60
80
100
1
3
2.5
1.5
250
150
40
15
5
3
μ
A
mA
mA
V
V
V
V
MHz
ELECTRICAL CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
*Pulsed : Pulse duration = 300
μ
s , duty cycle = 1.5%
Parameter
On Time
Storage Time
Fall Time
Test Conditions
I
C
= 4A V
CC
= 30V I
B1
= 0.4A
I
C
= 4A V
CC
= 30V
I
B1
=
–
I
B2
= 0.4A
Max.
0.7
1.0
0.8
Unit
μ
s
μ
s
μ
s
t
on
t
s
t
r
(t
d
+ t
r
)
SWITCHING CHARACTERISTICS
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(sat)*
V
BE*
h
FE*
f
T
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector - Emitter
sustaining voltage (I
B
= 0)
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
Base - Emitter voltage
DC Current Gain
Transition frequency
Test Conditions
Max.
1.4
Unit
°
C/W
R
θ
J-C
Thermal Resistance Junction to Case
THERMAL CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BDS11SMD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| BDS12SMD05 | DIODE TVS 8.0V 600W UNI 5% SMB |
| BDS12 | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| BDS12SMD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| BDS13CECC | TVS Diode; TVS Polarization:Unidirectional; Stand-Off Voltage, VRWM:8.5V; Breakdown Voltage, Vbr:9.44V; Peak Pulse Power PPK @ 10x1000uS:600W; Package/Case:DO-214AA; Leaded Process Compatible:Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BDS11CECC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| BDS11IG | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE |
| BDS11SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| BDS11SMD05 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES |
| BDS12 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
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