| 型號(hào) | 廠商 | 描述 |
| bd7960fm 2 3 4 5 6 7 8 9 10 |
Controller Miscellaneous - Datasheet Reference | |
| bd9060-33 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):55A; Peak Non Repetitive Surge Current, Itsm:650A; Gate Trigger Current Max, Igt:40mA | |
| bd906 |
Boca Semiconductor Corp. | COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
| bd906 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(15A,90W) |
| bd948-sm 2 3 4 5 6 7 |
TRANSISTOR LEISTUNGS BIPOLAR | |
| bd956-sm 2 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):55A; Peak Non Repetitive Surge Current, Itsm:650A; Gate Trigger Current Max, Igt:40mA | |
| bd956 2 |
Continental Device India Limited | NPN PLASTIC POWER TRANSISTORS |
| bd975 2 3 4 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA | |
| bd977 2 3 4 |
DIODE TVS 12V 500W UNI-DIR | |
| bd979 2 3 4 |
DIODE TVS 15V 500W BI-DIR | |
| bdb05001000 2 3 4 5 6 7 8 |
DIODE TVS 20V 400W UNI 5% SMA | |
| bdc01a |
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-226AE | |
| bdc01b |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-226AE | |
| bdc01c |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1.5A I(C) | TO-226AE | |
| bdc02a |
DIODE TVS 30V 400W UNI 5% SMA | |
| bdc02b |
DIODE TVS 33V 400W BIDIR 5% SMA | |
| bdc02c |
DIODE TVS 350V 400W BIDIR 5% SMA | |
| bdc07 |
DIODE TVS 40V 400W UNI 5% SMA | |
| bdm1615 2 |
Transient Surge Protection Thyristor; Leaded Process Compatible:Yes; Package/Case:DO-214; Mounting Type:Through Hole; Polarization:Unipolar; Power Rating:600W; Type:TVS-Unidirectional; Voltage Rating:150V RoHS Compliant: Yes | |
| bdm1616 2 |
TVS Diode; TVS Polarization:Unidirectional; Stand-Off Voltage, VRWM:15V; Breakdown Voltage, Vbr:16.7V; Peak Pulse Power PPK @ 10x1000uS:600W; Package/Case:DO-214; Leaded Process Compatible:Yes; Mounting Type:Through Hole | |
| bdm1617 2 |
DIODE TVS 160V 600W UNI 5% SMB | |
| bdp949q62702-d1337 2 3 4 |
DIODE TVS 48V 600W UNIDIR 5% SMB | |
| bdp95 2 3 4 |
Transient Surge Protection Thyristor; Leaded Process Compatible:Yes; Package/Case:DO-214; Mounting Type:Through Hole; Polarization:Unipolar; Power Rating:600W; Type:TVS-Unidirectional; Voltage Rating:5V | |
| bds10smd05 |
DIODE TVS 64V 600W BIDIR 5% SMB | |
| bds10 |
SEMELAB LTD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bds10smd |
SEMELAB LTD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bds11cecc 2 |
DIODE TVS 7.0V 600W UNI-DIR SM | |
| bds11smd05 2 |
TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:7V; Breakdown Voltage, Vbr:7.78V; Peak Pulse Power PPK @ 10x1000uS:600W; Package/Case:DO-214; Leaded Process Compatible:Yes; Mounting Type:Surface Mount | |
| bds12cecc 2 |
DIODE TVS 75V 600W UNIDIR 5% SMB | |
| bds11 2 |
SEMELAB LTD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bds11smd 2 |
SEMELAB LTD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bds12smd05 |
DIODE TVS 8.0V 600W UNI 5% SMB | |
| bds12 |
SEMELAB LTD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bds12smd |
SEMELAB LTD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bds13cecc 2 |
TVS Diode; TVS Polarization:Unidirectional; Stand-Off Voltage, VRWM:8.5V; Breakdown Voltage, Vbr:9.44V; Peak Pulse Power PPK @ 10x1000uS:600W; Package/Case:DO-214AA; Leaded Process Compatible:Yes | |
| bds13smd05 2 |
DIODE TVS 8.5V 600W BIDIR 5% SMB | |
| bds14cecc 2 |
DIODE TVS 9.0V 600W BIDIR 5% SMB | |
| bds15cecc 2 |
PNP | |
| bds15smd05 2 |
PNP | |
| bds13 2 |
SEMELAB LTD | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bds13smd 2 |
SEMELAB LTD | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bds14smd05 |
DIODE TVS 100V 1500W UNI 5% SMC | |
| bds14 |
SEMELAB LTD | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bds14smd |
SEMELAB LTD | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bds16cecc 2 |
NPN | |
| bds16smd05 2 |
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 15A I(C) | SMT | |
| bds17cecc 2 |
DIODE TVS 130V 1500W BI 5% SMC | |
| bds16 2 |
SEMELAB LTD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bds16smd 2 |
SEMELAB LTD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bds18smd05 |
DIODE TVS 15V 1500W UNI 5% SMC |