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參數(shù)資料
| 型號(hào)： | BDS11SMD05 |
| 英文描述： | TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:7V; Breakdown Voltage, Vbr:7.78V; Peak Pulse Power PPK @ 10x1000uS:600W; Package/Case:DO-214; Leaded Process Compatible:Yes; Mounting Type:Surface Mount |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁|第15A一（c）|貼片 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 47K |
| 代理商： | BDS11SMD05 |
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukDocument Number 3254
Issue 2
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
BDS10
BDS11
BDS12
BDS10SMD
BDS11SMD
BDS12SMD
BDS10SMD05
BDS11SMD05
BDS12SMD05
Parameter
Test Conditions
BDS10
BDS11
BDS12
BDS10
BDS11
BDS12
Min.
Typ.
Max.
500
500
500
1
1
1
Unit
V
CB
= 60V
V
CB
= 80V
V
CB
= 100V
V
CE
= 30V
V
CE
= 40V
V
CE
= 50V
V
EB
= 5V
BDS10
BDS11
BDS12
I
C
= 5A
I
C
= 10A
I
C
= 100mA
I
B
= 0.5A
I
B
= 2.5A
I
C
= 10A
I
B
= 2.5A
I
C
= 5A
I
C
= 0.5A
I
C
= 5A
I
C
= 10A
I
C
= 0.5A
f = 1MHz
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
1
60
80
100
1
3
2.5
1.5
250
150
40
15
5
3
μ
A
mA
mA
V
V
V
V
MHz
ELECTRICAL CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
*Pulsed : Pulse duration = 300
μ
s , duty cycle = 1.5%
Parameter
On Time
Storage Time
Fall Time
Test Conditions
I
C
= 4A V
CC
= 30V I
B1
= 0.4A
I
C
= 4A V
CC
= 30V
I
B1
=
–
I
B2
= 0.4A
Max.
0.7
1.0
0.8
Unit
μ
s
μ
s
μ
s
t
on
t
s
t
r
(t
d
+ t
r
)
SWITCHING CHARACTERISTICS
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(sat)*
V
BE*
h
FE*
f
T
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector - Emitter
sustaining voltage (I
B
= 0)
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
Base - Emitter voltage
DC Current Gain
Transition frequency
Test Conditions
Max.
1.4
Unit
°
C/W
R
θ
J-C
Thermal Resistance Junction to Case
THERMAL CHARACTERISTICS
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|---|---|
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| BDS12CECC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| BDS12IG | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE |
| BDS12SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
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