- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373015 > BDS16 (SEMELAB LTD) SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES PDF資料下載
參數(shù)資料
| 型號： | BDS16 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| 中文描述： | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, METAL, TO-220M, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 49K |
| 代理商： | BDS16 |
Document Number 3347
Issue 1
BDS16 BDS16SMD
BDS17 BDS17SMD
BDS16SMD05
BDS17SMD05
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Parameter
Test Conditions
I
C
= 2A V
CC
= 80V
I
B1
= 0.2A
I
C
= 2A V
CC
= 80V
I
B1
=
–
I
B2
= 0.2A
Max.
Unit
R
THj-case
R
THj-a
Thermal resistance junction - case
Thermal resistance junction - ambient(TO-220 only)
Max. 2.5
°
C/W
Max. 62.5
°
C/W
Parameter
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector - Emitter
sustaining voltage (I
B
= 0)
Collector - Emitter
saturation voltage
Base - Emitter voltage
Test Conditions
BDS16
BDS17
Min.
Typ.
Max.
20
20
0.1
0.1
Unit
DC Current gain
Transition frequency
V
CB
= 120V
V
CB
= 150V
BDS16
V
CE
= 60V
BDS17
V
EB
= 5V
BDS16
BDS17
I
C
= 4A
I
C
= 0.5A
I
C
= 1A
I
C
= 0.5A
I
C
= 4A
I
C
= 0.5A
F = 20MHz
V
CE
= 75V
I
B
= 0.4A
I
B
= 0.05A
V
CE
= 2V
V
CE
= 2V
V
CE
= 2V
V
CE
= 10V
10
120
150
1.5
0.4
1.0
250
150
40
15
30
μ
A
mA
μ
A
V
V
V
V
MHz
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(on)*
h
FE*
f
T
ELECTRICAL CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
THERMAL DATA
I
C
= 100mA
t
on
t
s
t
f
On Time
(t
d
+ t
r
)
Storage Time
Fall Time
0.5
1.5
0.3
μ
s
μ
s
μ
s
SWITCHING CHARACTERISTICS
*Pulsed : Pulse duration = 300
μ
s , duty cycle = 1.5%
相關PDF資料 |
PDF描述 |
|---|---|
| BDS16SMD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| BDS18SMD05 | DIODE TVS 15V 1500W UNI 5% SMC |
| BDS19CECC | DIODE TVS 160V 1500W UNI 5% SMC |
| BDS18CECC | DIODE TVS 150V 1500W UNI 5% SMC |
| BDS18 | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BDS16_07 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD CERAMIC SURFACE MOUNT PACKAGES |
| BDS166 | 功能描述:控制開關 EXT SHAFT, 6.54IN RoHS:否 制造商:Omron Industrial 控制類型:Emergency Stop 觸點額定值:5 A at 125 VAC 觸點形式:1 Form B (SPST-NC) 電壓額定值: 電流額定值: 執(zhí)行器:Pushbutton 照明:N 安裝風格: |
| BDS16CECC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| BDS16SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| BDS16SMD05 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD CERAMIC SURFACE MOUNT PACKAGES |
發(fā)布緊急采購，3分鐘左右您將得到回復。