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參數(shù)資料
| 型號： | BDS16SMD05 |
| 英文描述： | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 15A I(C) | SMT |
| 中文描述： | 晶體管|晶體管| npn型| 120伏特五（巴西）總裁|第15A一（c）|貼片 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 49K |
| 代理商： | BDS16SMD05 |
Document Number 3347
Issue 1
BDS16 BDS16SMD
BDS17 BDS17SMD
BDS16SMD05
BDS17SMD05
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Parameter
Test Conditions
I
C
= 2A V
CC
= 80V
I
B1
= 0.2A
I
C
= 2A V
CC
= 80V
I
B1
=
–
I
B2
= 0.2A
Max.
Unit
R
THj-case
R
THj-a
Thermal resistance junction - case
Thermal resistance junction - ambient(TO-220 only)
Max. 2.5
°
C/W
Max. 62.5
°
C/W
Parameter
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector - Emitter
sustaining voltage (I
B
= 0)
Collector - Emitter
saturation voltage
Base - Emitter voltage
Test Conditions
BDS16
BDS17
Min.
Typ.
Max.
20
20
0.1
0.1
Unit
DC Current gain
Transition frequency
V
CB
= 120V
V
CB
= 150V
BDS16
V
CE
= 60V
BDS17
V
EB
= 5V
BDS16
BDS17
I
C
= 4A
I
C
= 0.5A
I
C
= 1A
I
C
= 0.5A
I
C
= 4A
I
C
= 0.5A
F = 20MHz
V
CE
= 75V
I
B
= 0.4A
I
B
= 0.05A
V
CE
= 2V
V
CE
= 2V
V
CE
= 2V
V
CE
= 10V
10
120
150
1.5
0.4
1.0
250
150
40
15
30
μ
A
mA
μ
A
V
V
V
V
MHz
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(on)*
h
FE*
f
T
ELECTRICAL CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
THERMAL DATA
I
C
= 100mA
t
on
t
s
t
f
On Time
(t
d
+ t
r
)
Storage Time
Fall Time
0.5
1.5
0.3
μ
s
μ
s
μ
s
SWITCHING CHARACTERISTICS
*Pulsed : Pulse duration = 300
μ
s , duty cycle = 1.5%
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