參數(shù)資料
型號(hào)： BF1102
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel dual-gate MOSFET
封裝： BF1102<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<week 23, 2003,;
文件頁(yè)數(shù)： 4/14頁(yè)
文件大?。?/td> 370K
代理商： BF1102
2000 Apr 11
4
NXP Semiconductors
Product specification
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
STATIC CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1.
R
G1
connects gate 1 to V
GG
= 5 V.
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
C; V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 15 mA; unless otherwise specified.
Notes
1.
2.
3.
Not used MOS-FET: V
G1-S
= 0; V
DS
= 0.
Gate 2 capacitance of both MOS-FETs.
Measured in test circuit of Fig.20.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per MOS-FET unless otherwise specified
V
(BR)DSS
V
(BR)G1-SS
V
(BR)G2-SS
V
(F)S-G1
V
(F)S-G2
V
G1-S(th)
V
G2-S(th)
I
DSX
I
G1-S
I
G2-S
drain-source breakdown voltage
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
V
G1-S
= V
G2-S
= 0; I
D
= 10
A
V
GS
= V
DS
= 0; I
G1-S
= 10 mA
V
GS
= V
DS
= 0; I
G2-S
= 5 mA
V
G2-S
= V
DS
= 0; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0; I
S-G2
= 10 mA
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 100
A
V
DS
= 5 V; V
G1-S
= 4 V; I
D
= 100
A
V
G2-S
= 4 V; V
DS
= 5 V; R
G
= 120 k
; note 1
V
G1-S
= 5 V; V
G2-S
= V
DS
= 0
V
G2-S
= 5 V; V
G1-S
= V
DS
= 0
7
6
6
0.5
0.5
0.3
0.3
12
15
15
1.5
1.5
1
1.2
20
50
20
V
V
V
V
V
V
V
mA
nA
nA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per MOS-FET unless otherwise specified
(note 1)
y
fs
forward transfer admittance
C
ig1-ss
input capacitance at gate 1
C
ig2-ss
input capacitance at gate 2
C
oss
output capacitance
C
rss
reverse transfer capacitance
F
noise figure
X
mod
cross-modulation
T
j
= 25
C
f = 1 MHz
f = 1 MHz; (note 2)
f = 1 MHz
f = 1 MHz
f = 800 MHz; Y
S
= Y
S opt
f
w
= 50 MHz; f
unw
= 60 MHz; (note 3)
input level for k = 1% at 0 dB AGC
input level for k = 1% at 40 dB AGC
36
2
43
2.8
1.6
30
2
50
3.6
7
2.5
50
2.8
mS
pF
pF
pF
fF
dB
85
100
dB
V
dB
V
相關(guān)PDF資料
PDF描述
BF1102R N-channel dual-gate MOSFET
BF1102R N-channel dual-gate MOSFET
BF1105 N-channel dual-gate MOSFET
BF1105 N-channel dual-gate MOSFET
BF1105R N-channel dual-gate MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1102,115 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 7V 40mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1102_00 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FETs
BF1102R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dual N-channel dual gate MOS-FETs
BF1102R T/R 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1102R,115 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
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