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參數(shù)資料
| 型號： | BF904AR |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF904AR<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,; |
| 文件頁數(shù)： | 7/15頁 |
| 文件大?。?/td> | 302K |
| 代理商： | BF904AR |
NXP
Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
Fig.13 Drain current as a function of gate 1 supply
voltage (= V
GG
); typical values.
V
DS
= 5 V; V
G2-S
= 4 V; T
j
= 25
°
C.
R
G1
= 120 k
(connected to V
GG
); see Fig.21.
handbook, halfpage
0
8
4
0
1
5
MLD275
2
3
4
ID
(mA)
VGG
Fig.14 Drain current as a function of gate 1
(= V
GG
) and drain supply voltage;
typical values.
V
G2-S
= 4 V; T
j
= 25
°
C.
R
G1
connected to V
GG
; see Fig.21.
handbook, halfpage
ID
(mA)
0
10
15
5
0
2
4
8
MLD274
6
VGG
DS
RG1
68 k
82 k
100 k
120 k
150 k
180 k
220 k
V
DS
= 5 V; T
j
= 25
°
C.
R
G1
= 120 k
(connected to V
GG
); see Fig.21.
Fig.15 Drain current as a function of gate 2 voltage;
typical values.
handbook, halfpage
0
2
4
6
0
MLD276
8
4
ID
(mA)
4.5 V
4 V
3.5 V
3 V
VG2 S
VGG
Fig.16 Gate 1 current as a function of gate 2
voltage; typical values.
V
DS
= 5 V; T
j
= 25
°
C.
R
G1
= 120 k
(connected to V
GG
); see Fig.21.
handbook, halfpage
IG1
(
μ
A)
0
2
4
6
30
10
0
20
MLB945
VG2 S
4.5 V
4 V
3.5 V
3 V
VGG
Rev. 04 - 13 November 2007
7 of 15
相關PDF資料 |
PDF描述 |
|---|---|
| BF904AWR | N-channel dual-gate MOSFET |
| BF904AR | N-channel dual-gate MOSFET |
| BF904AWR | N-channel dual-gate MOSFET |
| BF904WR | N-channel dual-gate MOSFET |
| BF904WR | N-channel dual-gate MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BF904AR,215 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF904AWR | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual gate MOS-FETs |
| BF904AWR T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF904AWR,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF904R | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual gate MOS-FETs |
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