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參數(shù)資料
| 型號(hào)： | BF904R |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF904R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,;BF904R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, |
| 文件頁(yè)數(shù)： | 2/14頁(yè) |
| 文件大?。?/td> | 303K |
| 代理商： | BF904R |
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NXP
Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
FEATURES
Specially designed for use at 5 V supply voltage
Short channel transistor with high transfer admittance to
input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.
APPLICATIONS
VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143B and SOT143R package. The
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
CAUTION
This product is supplied in anti-static packing to
prevent damage caused by electrostatic discharge
during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A
and SNW-FQ-302B.
PIN
SYMBOL
DESCRIPTION
1
2
3
4
s, b
d
g
2
g
1
source
drain
gate 2
gate 1
Fig.1 Simplified outline (SOT143B) and symbol.
BF904 marking code:
%
M
C
.
handbook, halfpage
4
3
2
1
Top view
MAM124
s,b
d
g1
g2
Fig.2 Simplified outline (SOT143R) and symbol.
BF904R marking code:
%
M
D
.
handbook, halfpage
Top view
MAM125 - 1
s,b
d
g1
g2
3
4
1
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
I
D
P
tot
T
j
y
fs
C
ig1-s
C
rs
F
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
22
25
2.2
25
2
7
30
200
150
30
2.6
35
V
mA
mW
°
C
mS
pF
fF
dB
f = 1 MHz
f = 800 MHz
Rev. 06 - 13 November 2007
2 of 14
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF904R T/R | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF904R,215 | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF904R,235 | 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF904R/T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR SMD MOSFET SOT |
| BF904RT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 7V V(BR)DSS | 30MA I(D) | SOT-143R |
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