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參數(shù)資料
| 型號： | BF904WR |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF904WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2002,;BF904WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 156K |
| 代理商： | BF904WR |
2010 Sep 15
7
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF904WR
Fig.11 Drain current as a function of gate 1
supply voltage (= V
GG
); typical values;
see Fig.19.
V
DS
= 5 V; V
G2-S
= 4 V.
R
G1
= 120 k
(connected to V
GG
); T
j
= 25
C.
handbook, halfpage
0
8
4
0
1
5
MLD275
2
3
4
ID
(mA)
VGG
Fig.12 Drain current as a function of gate 1
(= V
GG
) and drain supply voltage;
typical values; see Fig.19.
V
G2-S
= 4 V.
R
G1
connected to V
GG
; T
j
= 25
C.
handbook, halfpage
ID
(mA)
0
10
15
5
0
2
4
8
MLD274
6
VGG
DS
RG1
Ω
68 k
Ω
82 k
Ω
100 k
Ω
120 k
Ω
150 k
Ω
180 k
Ω
220 k
Ω
V
DS
= 5 V; T
j
= 25
C.
R
G
= 120 k
(connected to V
GG
).
Fig.13 Drain current as a function of gate 2 voltage;
typical values; see Fig.19.
handbook, halfpage
0
2
4
6
0
MLD276
8
4
ID
(mA)
4.5 V
4 V
3.5 V
3 V
VG2 S
VGG
Fig.14 Gate 1 current as a function of gate 2
voltage; typical values; see Fig.19.
V
DS
= 5 V; T
j
= 25
C.
R
G
= 120 k
(connected to V
GG
).
handbook, halfpage
IG1
(
μ
A)
0
2
4
6
30
10
0
20
MLB945
VG2 S
4.5 V
4 V
3.5 V
3 V
VGG
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| BF904WR T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF904WR,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF904WR,135 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF904WRT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 7V V(BR)DSS | 30MA I(D) | SOT-343R |
| BF908 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual-gate MOS-FETs |
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