參數(shù)資料
型號: BF998
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: N-channel dual-gate MOSFET
封裝: BF998<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;BF998<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 20
文件頁數(shù): 11/15頁
文件大?。?/td> 279K
代理商: BF998
1996 Aug 01
11
NXP Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
PACKAGE OUTLINES
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
1.1
0.9
A1
max
0.1
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
HE
y
w
v
Q
2.5
2.1
0.45
0.15
0.55
0.45
e
1.9
e1
1.7
Lp
0.1
0.1
0.2
bp
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143B
04-11-16
06-03-16
0
1
2 mm
scale
Plastic surface-mounted package; 4 leads
SOT143B
D
HE
E
A
B
v
M
A
X
A
A1
Lp
Q
detail X
c
y
w
M
e1
e
B
2
1
3
4
b1
bp
相關PDF資料
PDF描述
BF998R N-channel dual-gate MOSFET
BF998R N-channel dual-gate MOSFET
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BFG135 NPN 7 GHz wideband transistor
相關代理商/技術參數(shù)
參數(shù)描述
BF998 T/R 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143B T/R
BF998,215 功能描述:射頻MOSFET小信號晶體管 N-CH DUAL GATE 12V VHF/UHF RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF998,215-CUT TAPE 制造商:NXP 功能描述:BF998 Series 12 V 30 mA N-channel Dual-gate MOS-FET - SOT143B
BF998,235 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 12V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF998 制造商:Vishay Siliconix 功能描述:MOSFET N RF DUAL-GATE SOT-143