參數(shù)資料
型號: BF998R
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: N-channel dual-gate MOSFET
封裝: BF998R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,;BF998R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47,
文件頁數(shù): 2/15頁
文件大?。?/td> 279K
代理商: BF998R
1996 Aug 01
2
NXP Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
FEATURES
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
DESCRIPTION
Depletion type field effect transistor in a plastic
microminiature SOT143B or SOT143R package with
source and substrate interconnected. The transistors are
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
PINNING
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PIN
SYMBOL
DESCRIPTION
1
2
3
4
s, b
d
g
2
g
1
source
drain
gate 2
gate 1
Fig.1
Simplified outline (SOT143B)
and symbol; BF998.
Marking code:
MOp.
handbook, halfpage
s,b
d
g1
g2
4
3
2
1
Top view
MAM039
handbook, halfpage
s,b
d
g1
g2
MAM040
3
4
1
2
Top view
Fig.2
Simplified outline (SOT143R)
and symbol; BF998R.
Marking code:
MOp.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
DS
I
D
P
tot
y
fs
C
ig1-s
C
rs
F
T
j
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
operating junction temperature
24
2.1
25
1
12
30
200
150
V
mA
mW
mS
pF
fF
dB
C
f = 1 MHz
f = 800 MHz
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BF998R215 制造商:NXP Semiconductors 功能描述:UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
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BF998RA-GS08 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode