參數(shù)資料
型號(hào)： BFG21W
廠商： NXP Semiconductors N.V.
元件分類： 晶體管
英文描述： UHF power transistor
封裝： BFG21W<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2002,;
文件頁數(shù)： 4/11頁
文件大?。?/td> 217K
代理商： BFG21W
1998 Jul 06
4
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
APPLICATION INFORMATION
RF performance at T
s
60
C in a common emitter test circuit (see Figs 4 and 5).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
10
100
3
1.5
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
I
CES
h
FE
C
c
C
re
f
T
collector-base breakdown voltage
collector-emitter breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
transition frequency
open emitter; I
C
= 0.1 mA
open base; I
C
= 10 mA
R
BE
< 1 k
, I
C
= 10 mA
open collector; I
E
= 0.1 mA
V
CE
= 5 V; V
BE
= 0
I
C
= 200 mA; V
CE
= 2 V
I
E
= i
e
= 0; V
CB
= 3 V; f = 1 MHz
I
C
= 0; V
CB
= 3.6 V; f = 1 MHz
I
C
= 200 mA; V
CE
= 3.6 V;
f = 700 MHz
15
4.5
10
1
40
18
V
V
V
V
A
pF
pF
GHz
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
CQ
(mA)
P
L
(dBm)
G
p
(dB)
10
C
(%)
Pulsed; class-AB;
< 1 : 2; t
p
= 5 ms
1.9
3.6
1
26
typ. 55
Ruggedness in class-AB operation
The transistor is capable of withstanding a load mismatch
corresponding to VSWR = 6 : 1 through all phases at
26 dBm output power under pulsed conditions:
= 1 : 2;
t
p
= 5 ms; f = 1.9 GHz at V
CE
= 4.5 V.
Fig.3
Power gain and collector efficiency as a
function of the load power; typical values.
Pulsed, class-AB operation;
< 1 : 2; t
p
= 5 ms.
f = 1.9 GHz; V
CE
= 3.6 V; I
CQ
= 1 mA; tuned at P
L
= 26 dBm.
handbook, halfpage
Gp
(dB)
5
8
12
4
0
80
40
60
20
0
10
30
MGM220
15
20
25
PL (dBm)
η
C
(%)
η
C
Gp
相關(guān)PDF資料
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