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參數(shù)資料
| 型號： | BFG25 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | DC/DC變換器 |
| 英文描述： | RKZ Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 12V; Power: 2W; High Isolation 2W Converter; Approved for Medical Applications; Custom Solutions Available; 3kVDC & 4kVDC Isolation Options; UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Efficiency to 84% |
| 中文描述： | 叩5 GHz的寬帶晶體管 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 119K |
| 代理商： | BFG25 |
1997 Oct 29
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
8
5
2
6.5
32
150
175
V
V
V
mA
mW
°
C
°
C
T
s
≤
165
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point note 1
320
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
50
3.5
TYP.
80
0.21
5
MAX.
UNIT
μ
A
I
CBO
h
FE
C
re
f
T
collector leakage current
DC current gain
feedback capacitance
transition frequency
I
E
= 0; V
CB
= 5 V
I
C
= 0.5 mA; V
CE
= 1 V
I
C
= i
c
= 0; V
CB
= 1 V; f = 1 MHz
I
C
= 1 mA; V
CE
= 1 V;
T
amb
= 25
°
C; f = 500 MHz
I
C
= 0.5 mA; V
CE
= 1 V;
f = 1 GHz; T
amb
= 25
°
C
I
C
= 0.5 mA; V
CE
= 1 V; f = 1 GHz;
Γ
=
Γ
opt
; T
amb
= 25
°
C
I
C
= 1 mA; V
CE
= 1 V; f = 1 GHz;
Γ
=
Γ
opt
; T
amb
= 25
°
C
50
200
0.3
pF
GHz
G
UM
maximum unilateral power gain
(note 1)
noise figure
18
dB
F
1.8
dB
2
dB
G
UM
10 log
S
2
1
S
11
–
1
S
22
–
--------------------------------------------------------------dB
=
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|---|---|
| BFG-2550 | 制造商:Misc 功能描述: |
| BFG25A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 5 GHz wideband transistor |
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| BFG25A/X T/R | 功能描述:射頻雙極小信號晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFG25A/X,215 | 功能描述:射頻雙極小信號晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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