參數(shù)資料
型號(hào): BFG25
廠商: NXP Semiconductors N.V.
元件分類: DC/DC變換器
英文描述: RKZ Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 12V; Power: 2W; High Isolation 2W Converter; Approved for Medical Applications; Custom Solutions Available; 3kVDC & 4kVDC Isolation Options; UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Efficiency to 84%
中文描述: 叩5 GHz的寬帶晶體管
文件頁(yè)數(shù): 5/12頁(yè)
文件大小: 119K
代理商: BFG25
1997 Oct 29
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
Fig.6
Gain as a function of collector current;
typical values.
V
CE
= 1 V; f = 500 MHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
handbook, halfpage
20
10
0
MCD141
gain
(dB)
IC
0
1.0
2.5
0.5
1.5
2.0
MSG
GUM
Fig.7
Gain as a function of collector current;
typical values.
V
CE
= 1 V; f = 1 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
handbook, halfpage
gain
(dB)
0
1.0
2.5
15
5
0
10
MCD142
0.5
1.5
2.0
IC
MSG
GUM
Fig.8
Gain as a function of frequency;
typical values.
I
C
= 0.5 mA; V
CE
= 1 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
handbook, halfpage
gain
(dB)
MCD143
10
10
2
10
3
10
4
0
10
20
30
40
f (MHz)
GUM
MSG
Fig.9
Gain as a function of frequency;
typical values.
I
C
= 1 mA; V
CE
= 1 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
handbook, halfpage
(dB)
MCD144
10
10
2
10
3
10
4
0
10
20
30
40
f (MHz)
GUM
MSG
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BFG-2550 制造商:Misc 功能描述:
BFG25A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 5 GHz wideband transistor
BFG25A/X 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 5 GHz wideband transistor
BFG25A/X T/R 功能描述:射頻雙極小信號(hào)晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
BFG25A/X,215 功能描述:射頻雙極小信號(hào)晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel