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參數(shù)資料
| 型號： | BFQ67T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN 8 GHz wideband transistor |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-75, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 92K |
| 代理商： | BFQ67T |
2000 Mar 06
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67T
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT416 (SC-75) envelope.
APPLICATIONS
Wideband applications such as
satellite TV tuners and RF portable
communications equipment up to
2 GHz.
DESCRIPTION
NPN transistor in a plastic SOT416
(SC-75) package.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
fpage
1
2
3
MBK090
Top view
Fig.1 SOT416.
Marking code:
V2.
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
TYP.
100
8
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
open emitter
open base
20
10
50
150
V
V
mA
mW
T
s
≤
75
°
C; note 1
I
C
= 15 mA; V
CE
= 5 V; T
j
= 25
°
C
I
C
= 15 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
°
C
I
C
= 15 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
°
C
I
C
= 5 mA; V
CE
= 8 V; f = 1 GHz
GHz
G
UM
maximum unilateral power gain
13
dB
F
noise figure
1.3
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
20
10
2.5
50
150
+150
150
V
V
V
mA
mW
°
C
°
C
T
s
≤
75
°
C; note 1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFQ67T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | SOT-23 |
| BFQ67W | 制造商:NXP Semiconductors 功能描述: |
| BFQ67W,115 | 功能描述:射頻雙極小信號晶體管 NPN 10V 50mA 8GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFQ67W,135 | 功能描述:射頻雙極小信號晶體管 Single NPN 10V 50mA 300mW 60 8GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFQ67W115 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR RF NPN 10V 8GHZ |
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