- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384146 > BFS17 (Vishay Intertechnology,Inc.) Silicon NPN Planar RF Transistor(集電極電流25mA,射頻放大器應(yīng)用的NPN平面型晶體管) PDF資料下載
參數(shù)資料
| 型號： | BFS17 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor(集電極電流25mA,射頻放大器應(yīng)用的NPN平面型晶體管) |
| 中文描述： | 硅NPN平面射頻晶體管（集電極電流為25mA，射頻放大器應(yīng)用的npn型平面型晶體管） |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 149K |
| 代理商： | BFS17 |
BFS17/BFS17R/BFS17W
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
10 (10)
Rev. 4, 20-Jan-99
Document Number 85038
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFS17 | Silicon NPN Planar RF Transistor |
| BFS17R | Silicon NPN Planar RF Transistor |
| BFS17W | Silicon NPN Planar RF Transistor |
| BFT51F.A | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| BFT51FA | NPN SILICON HIGH FREQUENCY TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFS17 T/R | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.025A 3-Pin TO-236AB T/R |
| BFS17,215 | 功能描述:射頻雙極小信號晶體管 NPN 25MA 15V 1GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFS17,215-CUT TAPE | 制造商:NXP 功能描述:BFS17 Series 15 V 300 mW 1 GHz Wideband NPN Transistor - SOT23 |
| BFS17,235 | 功能描述:射頻雙極小信號晶體管 Single NPN 15V 25mA 300mW 25 1GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFS17 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN RF SOT-23 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。