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參數(shù)資料
| 型號(hào)： | BFY180P |
| 廠商： | SIEMENS A G |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 121K |
| 代理商： | BFY180P |
Micro-X1
Semiconductor Group
1
Draft A04 1998-04-01
HiRel NPN Silicon RF Transistor
BFY 180
Features
HiRel Discrete and Microwave Semiconductor
For low power amplifiers at collector currents from
0.2 to 2.5 mA
Hermetically sealed microwave package
f
T = 6.5 GHz, F = 2.6 dB at 2 GHz
qualified
ESA/SCC Detail Spec. No.: 5611/006
ESD: Electrostatic discharge sensitive device, observe handling precautions!
(ql) Quality Level: P: Professional Quality,
Ordering Code: Q97301013
H: High Rel Quality,
Ordering Code: on request
S: Space Quality,
Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q97111419
(see Chapter Order Instructions for ordering example)
1)
The maximum permissible base current for
V
FBE measurements is 3 mA (spot-measurement duration < 1 s).
2) T
S is measured on the collector lead at the soldering point to the pcb.
Type
Marking
Ordering Code
Pin Configuration
Package
BFY 180 (ql)
-
see below
C
E
B
E
Micro-X1
Table 1
Maximum Ratings
Parameter
Symbol
Limit Values
Unit
Collector-emitter voltage
V
CEO
8V
Collector-emitter voltage,
V
BE = 0
V
CES
15
V
Collector-base voltage
V
CBO
15
V
Emitter-base voltage
V
EBO
2V
Collector current
I
C
4mA
Base current
I
B
0.5
1)
mA
Total power dissipation,
T
S 176 °C
2)
P
tot
30
mW
Junction temperature
T
j
200
°C
Operating temperature range
T
op
- 65 + 200
°C
Storage temperature range
T
stg
- 65 + 200
°C
Thermal Resistance
Junction soldering point
2)
R
th JS
< 805
K/W
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