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參數(shù)資料
| 型號： | BFY180P |
| 廠商： | SIEMENS A G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 121K |
| 代理商： | BFY180P |
BFY 180
Semiconductor Group
2
Draft A04 1998-04-01
Electrical Characteristics
3)
This test assures
V
(BR)CE0 > 8 V.
Table 2
DC Characteristics at
T
A = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Collector-base cutoff current
V
CB = 10 V, IE = 0
I
CBO
--
100
mA
Collector-emitter cutoff current
V
CE = 8 V, IB = 0.05 mA
3)
I
CEX
--
50
mA
Collector-base cutoff current
V
CB = 8 V, IE = 0
I
CBO
--
50
nA
Emitter-base cutoff current
V
EB = 2 V, IC = 0
I
EBO
--
25
mA
Emitter-base cutoff current
V
EB = 1 V, IC = 0
I
EBO
--
0.5
mA
Base-emitter forward voltage
I
E = 3 mA, IC = 0
V
FBE
--
1V
DC current gain
I
C = 0.25 mA, VCE = 1 V
h
FE
30
100
175
-
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