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參數(shù)資料
| 型號： | BGD906L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 66K |
| 代理商： | BGD906L |
1999 Mar 22
2
Philips Semiconductors
Objective specification
CATV amplifier module
BGD906L
FEATURES
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
Low DC current consumption.
APPLICATIONS
CATV systems operating in the 40 to 900 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN
DESCRIPTION
1
2
3
5
7
8
9
input
common
common
+V
B
common
common
output
Fig.1 Simplified outline.
handbook, halfpage
789
23
5
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 50 MHz
f = 900 MHz
V
B
= 24 V
21.2
22
350
21.8
23
380
dB
dB
mA
I
tot
total current consumption (DC)
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
B
V
i
T
stg
T
mb
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
40
20
30
70
+100
+100
V
dBmV
°
C
°
C
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