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參數(shù)資料
| 型號： | BGD906L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 66K |
| 代理商： | BGD906L |
1999 Mar 22
3
Philips Semiconductors
Objective specification
CATV amplifier module
BGD906L
CHARACTERISTICS
Bandwidth 40 to 900 MHz; V
B
= 24 V; T
mb
= 35
°
C; Z
S
= Z
L
= 75
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
power gain
f = 50 MHz
f = 900 MHz
f = 40 to 900 MHz
f = 40 to 900 MHz
21.2
22
0.5
21.5
22.5
1.0
21.8
23
1.5
±
0.3
dB
dB
dB
dB
SL
FL
slope cable equivalent
flatness of frequency
response
input return losses
S
11
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 650 MHz
f = 650 to 900 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 900 MHz
f = 50 MHz
49 chs flat; V
o
= 47 dBmV; f
m
= 859.25 MHz
77 chs flat; V
o
= 44 dBmV; f
m
= 547.25 MHz
110 chs flat; V
o
= 44 dBmV; f
m
= 745.25 MHz
129 chs flat; V
o
= 44 dBmV; f
m
= 859.25 MHz
110 chs; f
m
= 400 MHz;
V
o
= 49 dBmV at 550 MHz; note 1
129 chs; f
m
= 650 MHz;
V
o
= 49.5 dBmV at 860 MHz; note 2
49 chs flat; V
o
= 47 dBmV; f
m
= 55.25 MHz
77 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
110 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
129 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
110 chs; f
m
= 400 MHz;
V
o
= 49 dBmV at 550 MHz; note 1
129 chs; f
m
= 860 MHz;
V
o
= 49.5 dBmV at 860 MHz; note 2
21
20
17
16
15
25
22
20
19
18
17
16
45
+45
63
64
58
54
tbd
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dB
S
22
output return losses
S
21
CTB
phase response
composite triple beat
tbd
dB
X
mod
cross modulation
59
62
59
57
tbd
dB
dB
dB
dB
dB
tbd
dB
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