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參數資料
| 型號： | BGD906MI |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | CATV amplifier modules |
| 中文描述： | 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數： | 3/12頁 |
| 文件大?。?/td> | 73K |
| 代理商： | BGD906MI |
2000 Mar 28
3
Philips Semiconductors
Product specification
CATV amplifier modules
BGD906; BGD906MI
CHARACTERISTICS
Bandwidth 40 to 900 MHz; V
B
= 24 V; T
mb
= 35
°
C; Z
S
= Z
L
= 75
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
power gain
f = 50 MHz
f = 900 MHz
f = 40 to 900 MHz
f = 40 to 900 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 900 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 900 MHz
f = 50 MHz
49 chs flat; V
o
= 47 dBmV; f
m
= 859.25 MHz
77 chs flat; V
o
= 44 dBmV; f
m
= 547.25 MHz
110 chs flat; V
o
= 44 dBmV; f
m
= 745.25 MHz
129 chs flat; V
o
= 44 dBmV; f
m
= 859.25 MHz
110 chs; f
m
= 397.25 MHz;
V
o
= 49 dBmV at 550 MHz; note 1
129 chs; f
m
= 697.25 MHz;
V
o
= 49.5 dBmV at 860 MHz; note 2
49 chs flat; V
o
= 47 dBmV; f
m
= 55.25 MHz
77 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
110 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
129 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
110 chs; f
m
= 397.25 MHz;
V
o
= 49 dBmV at 550 MHz; note 1
129 chs; f
m
= 859.25 MHz;
V
o
= 49.5 dBmV at 860 MHz; note 2
21.2
22
0.5
22
21
18
17
16
22
21
20
19
18
17
16
45
21.5
22.5
1
25
24
23
23
20
25
25
23
22
24
23
21
68.5
70
63
59
62.5
21.8
23
1.5
±
0.35
+45
66
67
61
57
60.5
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dB
SL
FL
s
11
slope straight line
flatness straight line
input return losses
s
22
output return losses
s
21
CTB
phase response
composite triple beat
57
54.5
dB
X
mod
cross modulation
64
67.5
64
61
60
62
65
61.5
60
58
dB
dB
dB
dB
dB
56.5
55
dB
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