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參數(shù)資料
| 型號： | BLF545 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF push-pull power MOS transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT-268A, 4 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 94K |
| 代理商： | BLF545 |
October 1992
4
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF545
CHARACTERISTICS (per section)
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
900
0.85
4.8
32
24
6.4
MAX.
1
1
4
1.25
UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
V
GS
= 0; I
D
= 10 mA
V
GS
= 0; V
DS
= 28 V
±
V
GS
= 20 V; V
DS
= 0
I
D
= 40 mA; V
DS
= 10 V
I
D
= 1.2 A; V
DS
= 10 V
I
D
= 1.2 A; V
GS
= 10 V
V
GS
= 15 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
65
1
600
V
mA
μ
A
V
mS
A
pF
pF
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current,
typical values per section.
V
DS
= 10 V.
handbook, halfpage
4
10
2
0
2
2
MDA504
ID (A)
T.C
(mV/K)
1
10
10
1
Fig.5
Drain current as a function of gate-source
voltage, typical values per section.
V
DS
= 10 V; T
j
= 25
°
C.
handbook, halfpage
0
4
2
0
5
VGS (V)
ID
(A)
10
20
15
MDA505
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| BLF546 | 功能描述:射頻MOSFET電源晶體管 BULK TNS-RFPR RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF546,112 | 功能描述:射頻MOSFET電源晶體管 BULK TNS-RFPR RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF547 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF push-pull power MOS transistor |
| BLF548 | 功能描述:射頻MOSFET電源晶體管 BULK TNS-RFPR RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF548,112 | 功能描述:射頻MOSFET電源晶體管 BULK TNS-RFPR RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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