參數(shù)資料
型號: BLF545
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF push-pull power MOS transistor
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: SOT-268A, 4 PIN
文件頁數(shù): 6/12頁
文件大?。?/td> 94K
代理商: BLF545
October 1992
6
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF545
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
h
= 25
°
C; R
th mb-h
= 0.25 K/W, unless otherwise specified.
RF performance in a common source, class-B, push-pull circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(mA)
2
×
40
P
L
(W)
G
P
(dB)
>
11
typ. 13
η
D
(%)
>
50
typ. 60
CW, class-B
500
28
40
Ruggedness in class-B operation
The BLF545 is capable of withstanding a full load
mismatch corresponding to VSWR = 50 through all phases
under the following conditions:
V
DS
= 28 V; f = 500 MHz at rated output power.
Fig.9
Power gain and efficiency as functions of
load power, typical values per section.
Class-B operation; V
= 28 V; I
= 2
×
40 mA;
Z
L
= 4.2
+
j6.2
(per section); f = 500 MHz.
handbook, halfpage
0
60
0
8
16
20
20
40
60
80
Gp
(dB)
40
MBK464
PL (W)
Gp
η
D
η
D
(%)
Fig.10 Load power as a function of input power,
typical values per section.
Class-B operation; V
= 28 V; I
= 2
×
40 mA;
Z
L
= 4.2
+
j6.2
(per section); f = 500 MHz.
handbook, halfpage
0
40
20
0
2
PL
(W)
PIN (W)
6
4
8
MBK465
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