- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369472 > BLF6G20-180P (NXP SEMICONDUCTORS) UHF power LDMOS transistor PDF資料下載
參數(shù)資料
| 型號： | BLF6G20-180P |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, FM-2 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 49K |
| 代理商： | BLF6G20-180P |
BLF6G20-180P_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 19 April 2006
3 of 8
Philips Semiconductors
BLF6G20-180P
UHF power LDMOS transistor
5.
Thermal characteristics
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLF6G20-180P is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 1600 mA; P
L
= 180 W (CW); f = 1880 MHz.
Table 5:
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from junction
to case
Conditions
T
case
= 80
°
C;
P
L(AV)
= 50 W
Typ
0.45
Unit
K/W
Table 6:
T
j
= 25
°
C per section; unless otherwise specified
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
gate-source threshold voltage
V
GSq
gate-source quiescent voltage
I
DSS
drain leakage current
I
DSX
drain cut-off current
Characteristics
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
Min
65
Typ
-
Max
-
Unit
V
V
DS
= 10 V; I
D
= 144 mA
V
DS
= 28 V; I
D
= 950 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 8.5 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 7.2 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
<tbd>
<tbd>
-
-
1.6
2
-
26
<tbd>
<tbd>
5
-
V
V
μ
A
A
I
GSS
g
fs
R
DS(on)
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
-
-
-
-
13
0.1
450
-
<tbd>
nA
S
C
rs
-
<tbd>
-
pF
Table 7:
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
1
= 1802.5 MHz; f
2
= 1807.5 MHz; f
3
= 1872.5 MHz; f
4
= 1877.5 MHz;
RF performance at V
DS
= 32 V; I
Dq
= 1600 mA; T
case
= 25
°
C; unless otherwise specified; in a
class-AB production test circuit
Symbol
Parameter
P
L(AV)
average output power
G
p
power gain
η
D
drain efficiency
ACPR
adjacent channel power ratio
Application information
Conditions
Min
-
<tbd> 17.5
<tbd> 27.5
-
Typ
50
Max
-
-
-
<tbd>
Unit
W
dB
%
dBc
P
L(AV)
= 50 W
P
L(AV)
= 50 W
P
L(AV)
= 50 W
35
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BLM31AF700SN1L | FERRIT INDUKTIVITAET SMD IMPEDANZ 70OHM |
| BLM31AJ601SN1L | FERRIT INDUKTIVITAET SMD IMPEDANZ 600OHM |
| BLM41AF151SN1L | FERRIT INDUKTIVITAET SMD IMPEDANZ 150OHM |
| BLM41PF800SN1L | FERRIT INDUKTIVITAET SMD IMPEDANZ 80OHM |
| BLM41PG600SN1L | FERRIT INDUKTIVITAET SMD IMPEDANZ 60OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF6G20-180PN | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Power LDMOS transistor |
| BLF6G20-180PN,112 | 功能描述:射頻MOSFET電源晶體管 Trans MOSFET N-CH 65V 5-Pin RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G20-180RN | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Power LDMOS transistor |
| BLF6G20-180RN,112 | 功能描述:射頻MOSFET電源晶體管 TRANSISTOR PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G20-230P | 功能描述:IC BASESTATION FINAL SOT502A RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。