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參數(shù)資料
| 型號： | BLV100 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171A, 6 PIN |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 63K |
| 代理商： | BLV100 |
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
BLV100
FEATURES
Internal input matching to achieve
high power gain
Ballasting resistors for an optimum
temperature profile
Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a SOT171 envelope, intended for
common emitter, class-AB operation
in radio transmitters for the 960 MHz
communications band. The transistor
has a 6-lead flange envelope with a
ceramic cap. All leads are isolated
from the flange.
PINNING - SOT171
PIN
DESCRIPTION
1
2
3
4
5
6
emitter
emitter
base
collector
emitter
emitter
PIN CONFIGURATION
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
MBA931 - 1
1
3
5
2
4
6
Top view
QUICK REFERENCE DATA
RF performance up to T
h
= 25
°
C in a common emitter class-AB test circuit.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
P
(dB)
>
8
η
c
(%)
>
50
c.w. class-AB
960
24
8
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