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參數(shù)資料
| 型號(hào)： | BLV100 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171A, 6 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 63K |
| 代理商： | BLV100 |
March 1993
5
Philips Semiconductors
Product specification
UHF power transistor
BLV100
APPLICATION INFORMATION
RF performance in a class-AB circuit; T
h
= 25
°
C; R
th mb-h
= 0.4 K/W, unless otherwise specified.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
P
L
(W)
G
P
(dB)
η
c
(%)
c.w. class-AB
960
24
20
8
>
8
typ. 9
>
50
typ. 55
Fig.6
Gain and efficiency as functions of load
power, typical values.
handbook, halfpage
0
8
4
0
4
GP
(dB)
PL (W)
8
12
MDA545
60
40
20
0
η
C
(%)
η
C
Gp
Ruggedness in class-AB operation
The BLV100 is capable of withstanding a load mismatch
corresponding to VSWR = 10:1 through all phases, under
the following conditions:
V
CE
= 24 V, f = 960 MHz, and rated output power.
Fig.7
Load power as a function of drive power,
typical values.
handbook, halfpage
0
10
5
0
1
PL
(W)
PS (W)
2
3
MDA539
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