參數(shù)資料
型號(hào): BLV10
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC PACKAGE-4
文件頁(yè)數(shù): 2/11頁(yè)
文件大小: 81K
代理商: BLV10
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLV10
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
It has a 3/8” flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°
C in an unneautralized common-emitter class-B circuit
MODE OF OPERATION
V
CE
V
f
MHz
P
L
W
G
P
dB
η
%
z
i
Y
L
mS
c.w.
c.w.
13,5
12,5
175
175
8
8
>
typ. 10,5
9,0
>
typ. 75
70
2,8
+
j1,2
76
j16
PIN CONFIGURATION
Fig.1 Simplified outline, SOT123.
handbook, halfpage
1
2
3
4
MSB057
PINNING
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
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