參數(shù)資料
型號(hào): BLV10
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC PACKAGE-4
文件頁數(shù): 6/11頁
文件大小: 81K
代理商: BLV10
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLV10
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit)
T
h
= 25
°
C
List of components:
f (MHz)
V
CE
(V)
13,5
12,5
P
L
(W)
8
8
P
S
(W)
<
1,0
G
P
(dB)
>
typ. 10,5
I
C
(A)
<
0,85
η
(%)
z
i
(
)
2,8
+
j1,2
Y
L
(mS)
76
j16
175
175
9,0
>
typ. 75
70
C1
C2
C3
C4
C5
C7
L1
L2
L3
L5
L7
L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1
=
10
carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit see Fig.8.
=
=
=
=
=
=
=
=
=
=
=
2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C6 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
47 pF ceramic capacitor (500 V)
120 pF ceramic capacitor (500 V)
100 nF polyester capacitor
5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
2 turns Cu wire (1,6 mm); int. dia. 4,5 mm; length 5,7 mm; leads 2
×
5 mm
L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = strip (12 mm
×
6 mm); tap for C3 at 5 mm from transistor
3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 7,5 mm; leads 2
×
5 mm
3 turns Cu wire (1,6 mm); int. dia. 6,5 mm; length 7,4 mm; leads 2
×
5 mm
Fig.7 Test circuit; c.w. class-B.
handbook, full pagewidth
MGP253
50
50
C1
L1
L3
R1
L2
L6
L5
L7
L4
C2
C3
T.U.T.
C4
C5
+
VCC
C6
C7
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