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參數(shù)資料
| 型號： | BLV91 |
| 英文描述： | TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 400MA I(C) | SOT-172A1 |
| 中文描述： | 晶體管|晶體管|叩| 16V的五（巴西）總裁| 400mA的一（c）|的SOT - 172A1 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 55K |
| 代理商： | BLV91 |
September 1988
2
Philips Semiconductors
Product specification
UHF power transistor
BLV91/SL
DESCRIPTION
NPN silicon planar epitaxial transistor designed for use in
mobile radio transmitters in the 900 MHz band.
FEATURES
diffused emitter-ballasting resistors for an optimum
temperature profile.
gold metallization ensures excellent reliability.
the device can be applied at rated load power, without
an external heatsink, when it is mounted on a
printed-circuit board (see Fig.6).
The transistor has a 4-lead envelope with a ceramic cap
(SOT-172D). All leads are isolated from the mounting
base.
QUICK REFERENCE DATA
RF performance in a common-emitter class-B circuit
Note
1.
Device mounted on a printed-circuit board (see Fig.6).
MODE OF OPERATION
T
°
C
V
CE
V
f
MHz
P
L
W
G
p
dB
>
6.5
>
6.5
typ. 6.6
η
C
%
>
50
>
50
typ. 60
narrow band; CW
T
mb
= 25
T
a
= 25
(1)
T
a
= 25
(1)
12.5
12.5
9.6
900
900
900
2
1.5
1.5
PIN CONFIGURATION
Fig.1 Simplified outline. SOT172D.
handbook, halfpage
2
1
4
3
MSB007
Top view
PINNING - SOT172D.
PIN
DESCRIPTION
1
2
3
4
emitter
base
collector
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe
provided that the BeO disc is not damaged.
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| BLV91/SL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
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