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參數(shù)資料
| 型號： | BLW90 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-122A, 4 PIN |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 58K |
| 代理商： | BLW90 |
August 1986
6
Philips Semiconductors
Product specification
UHF power transistor
BLW90
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); T
h
= 25
°
C
List of components:
Component layout and printed-circuit board for 470 MHz test circuit are shown in Fig.8.
f (MHz)
V
CE
(V)
28
28
P
L
(W)
4
4
P
S
(W)
<
typ. 0,23
G
p
(dB)
>
typ. 12,5
I
C
(A)
0,26
typ. 0,25
η
(%)
>
55
typ. 58
z
i
(
)
1,7
+
j1,8
Z
L
(
)
8
+
j26
470
470
0,32
11
<
C1 =
C2 =
C3 =
C4 =
L1
L2
L3
L4
L5
L6
L1 and L4 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (
ε
r
= 2,74);
thickness 1/16".
R1 =
100
carbon resistor
R2 =
10
carbon resistor
C5 = C6 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001)
2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002)
100 pF feed-through capacitor
100 nF polyester capacitor
stripline (34,8 mm
×
6,0 mm)
320 nH; 13 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 4 mm; leads 2
×
4 mm
L7 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
stripline (12,0 mm
×
6,0 mm)
265 nH; 13 turns closely wound enamelled Cu wire (0,35 mm); int. dia. 3,5 mm; leads 2
×
4 mm
29 nH; 3 turns closely wound enamelled Cu wire (1 mm); int. dia. 3,5 mm; leads 2
×
4 mm
=
=
=
=
=
=
Fig.7 Test circuit; c.w. class-B.
handbook, full pagewidth
MGP665
50
50
C2
L2
C1
C5
R2
C4
C3
C6
L4
+
VCC
L6
L5
L7
L1
L3
T.U.T.
R1
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