參數(shù)資料
型號: BQ24630RGET
廠商: TEXAS INSTRUMENTS INC
元件分類: 穩(wěn)壓器
英文描述: SWITCHED CAPACITOR CONVERTER, PQCC24
封裝: 4 X 4 MM, GREEN, PLASTIC, VQFN-24
文件頁數(shù): 31/33頁
文件大小: 1893K
代理商: BQ24630RGET
www.ti.com
SLUS894 – JANUARY 2010
ELECTRICAL CHARACTERISTICS (continued)
5.0V
≤ V(VCC) ≤28V, 0°C<TJ<+125°C,typical values are at TA=25°C, with respect to GND unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
AC SWITCH (ACFET) DRIVER
RDS_AC_OFF
ACFET turn-off resistance
VVCC > 5V
30
RDS_AC_ON
ACFET turn-on resistance
VVCC > 5V
20
k
VACDRV_REG = VVCC – VACDRV when VVCC > 5 V and
VACDRV_REG
ACFET drive voltage
4.2
7
V
ACFET is on
AC / BAT MOSFET DRIVERS TIMING
Driver dead time
Dead time when switching between AC and BAT
10
ms
BATTERY DETECTION
tWAKE
Wake timer
Max time charge is enabled
500
ms
IWAKE
Wake Current
RSENSE = 10 m
50
125
200
mA
tDISCHARGE
Discharge timer
Max time discharge current is applied
1
sec
IDISCHARGE
Discharge current
8
mA
IFAULT
Fault current after a timeout fault
2
mA
VWAKE
Wake threshold ( with-respect-to VREG)
Voltage on VFB to detect battery absent during Wake
125
mV
VDISCH
Discharge threshold
Voltage on VFB to detect battery absent during Discharge
0.35
V
PWM HIGH SIDE DRIVER (HIDRV)
RDS_HI_ON
High Side driver (HSD) turn-on resistance
VBTST – VPH = 5.5 V
3.3
6
RDS_HI_OFF
High Side driver turn-off resistance
VBTST – VPH = 5.5 V
1
1.3
Bootstrap refresh comparator threshold
VBTST_REFRESH
VBTST – VPH when low side refresh pulse is requested
4.0
4.2
V
voltage
PWM LOW SIDE DRIVER (LODRV)
RDS_LO_ON
Low side driver (LSD) turn-on resistance
4.1
7
RDS_LO_OFF
Low side driver turn-off resistance
1
1.4
PWM DRIVERS TIMING
Dead time when switching between LSD and HSD, no
30
Driver dead time
ns
load at LSD and HSD
PWM OSCILLATOR
VRAMP_HEIGHT
PWM ramp height
As percentage of VCC
7
%
PWM switching frequency(2)
255
300
345
kHz
INTERNAL SOFT START (8 steps to regulation current ICHG)
Soft start steps
8
step
Soft start step time
1.6
ms
CHARGER SECTION POWER-UP SEQUENCING
Delay from when adapter is detected to when the charger
Charge-enable delay after power-up
1.5
s
is allowed to turn on
LOGIC IO PIN CHARACTERISTICS
VIN_LO
CE input low threshold voltage
0.8
V
VIN_HI
CE input high threshold voltage
2.1
V
VBIAS_CE
CE input bias current
V = 3.3 V (CE has internal 1M
pulldown resistor)
6
mA
STAT1, STAT2, PG output low saturation
VOUT_LO
Sink current = 5 mA
0.5
V
voltage
IOUT_HI
Leakage current
V = 32 V
1.2
A
(2)
Verified by design
Copyright 2010, Texas Instruments Incorporated
7
Product Folder Link(s): bq24630
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