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參數(shù)資料
| 型號： | BRS212-240 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管&整流器 |
| 英文描述： | Breakover diodes |
| 中文描述： | 269 V, SYMMETRICAL BOD |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 32K |
| 代理商： | BRS212-240 |
Philips Semiconductors
Product specification
Breakover diodes
BRS212 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
A range of bidirectional, breakover
diodes in a two terminal, surface
mounting, plastic envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling capability. Their intended
application is protection of line based
telecommunications
against voltage transients.
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
V
(BO)
Breakover voltage
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
Holding current
Non-repetitive peak pulse
current (CCITT K17)
-
-
-
-
-
-
-
-
140
160
180
200
220
240
260
280
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
equipment
I
H
I
PP
150
-
mA
A
40
OUTLINE - SOD106
SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
V
D
Continuous voltage
CONDITIONS
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
5/310
μ
s impulse equivalent to
10/700
μ
s, 1.6 kV voltage impulse
(CCITT K17)
half sine wave; t = 10 ms;
T
= 70 C prior to surge
t
p
= 10 ms
t
p
= 10
μ
s
MIN.
-
-
-
-
-
-
-
-
-
MAX.
105
120
135
150
165
180
195
210
40
UNIT
V
V
V
V
V
V
V
V
A
I
PP
Non-repetitive peak pulse
current
I
TSM
Non repetitive surge peak
on-state current
I
2
t for fusing
Rate of rise of on-state current
after V
turn-on
Continuous dissipation on
infinite heatsink
Peak dissipation
Storage temperature
Operating junction temperature
Maximum terminal temperature
for soldering
-
15
A
I
2
t
dI
T
/dt
-
-
1.1
50
A
2
s
A/
μ
s
P
tot
T
sp
= 50C
-
4
W
P
TM
T
stg
T
j
T
L
t
p
= 1 ms; T
a
= 25C
-
50
150
150
260
W
C
C
C
- 40
-
-
soldering time = 10 s
212
XXX
XXX denotes voltage grade
date code
P
January 1997
1
Rev 1.000
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