型號 廠商 描述
brd600240r40
2
brs212
2 3 4 5 6		 NXP Semiconductors N.V. Breakover diodes
brs212-140
2 3 4 5 6		 NXP SEMICONDUCTORS Breakover diodes
brs212-160
2 3 4 5 6		 NXP SEMICONDUCTORS Breakover diodes
brs212-180
2 3 4 5 6		 NXP SEMICONDUCTORS Breakover diodes
brs212-200
2 3 4 5 6		 NXP SEMICONDUCTORS Breakover diodes
brs212-220
2 3 4 5 6		 NXP SEMICONDUCTORS Breakover diodes
brs212-240
2 3 4 5 6		 NXP SEMICONDUCTORS Breakover diodes
brs212-260
2 3 4 5 6		 NXP SEMICONDUCTORS Breakover diodes
brs212-280
2 3 4 5 6		 NXP SEMICONDUCTORS Breakover diodes
brs2a16e-tr
2 3 4 5 6 7 8 9 10 11 12		 Line Receiver
brs2a16g
2 3 4 5 6 7 8 9 10 11 12		 Line Receiver
brs2a16g-tr
2 3 4 5 6 7 8 9 10 11 12		 Line Receiver
brs2a16nb
2 3 4 5 6 7 8 9 10 11 12		 Line Receiver
brs2a16nb-tr
2 3 4 5 6 7 8 9 10 11 12		 Line Receiver
brs2a16p
2 3 4 5 6 7 8 9 10 11 12		 Super Fast Rectifier Diodes
brs505
2		 BRS DC/DC converters(1.5 WATT)
brs509
2		 BRS DC/DC converters(1.5 WATT)
brs512
2		 BRS DC/DC converters(1.5 WATT)
brs515
2		 BRS DC/DC converters(1.5 WATT)
brx44thrubrx47brx49
2 3 4		 Super Fast Rectifier Diodes
brx44
2 3 4		 Boca Semiconductor Corp. SCRs (Silicon Controlled Rectifiers)
brx44
2 3 4		 CENTRAL SEMICONDUCTOR CORP 0.8 to 110 Amperes RMS 15 to 1200 Volts
bry55-30thru600
2 3 4		 Super Fast Rectifier Diodes
bs03015nq67040-s4345
2 3 4 5 6 7 8		 30V N-Channel PowerTrench MOSFET
bs0604ns2q6740-s4175
2 3 4 5 6 7 8		 30V N-Channel PowerTrench MOSFET
bs08a
2 3 4 5 6		 SILICON BIDIRECTIONAL SWITCH|9V V(BO) MAX|200UA I(S)|TO-92
bs170
2 3 4 5 6 7 8		 NXP SEMICONDUCTORS N-channel vertical D-MOS transistor
bs170amo
2 3 4 5 6 7 8		 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 500MA I(D) | TO-92
bs170
2 3 4 5 6 7 8		 DIODES INC RP08 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 8 Watts Regulated Output Power; 1.6kVDC Isolation; ULCertified; Low Profile, 10.2 mm Height; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 87%
bs170kl
2 3 4 5 6 7 8		 Vishay Intertechnology,Inc. N-Channel 60-V (D-S) MOSFET
bs170
2 3 4 5 6 7 8		 Vishay Intertechnology,Inc. RP08 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 8 Watts Regulated Output Power; 1.6kVDC Isolation; ULCertified; Low Profile, 10.2 mm Height; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 87%
bs170kl-tr1
2 3 4 5 6 7 8		 Vishay Intertechnology,Inc. N-Channel 60-V (D-S) MOSFET
bs170
2 3 4 5 6 7 8		 GE Security, Inc. DMOS Transistors (N-Channel)
bs62xv1024
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Automotive Rectifier Diodes
bsa21
 Automotive Rectifier Diodes
bsfc-series
2		 Automotive Rectifier Diodes
bsfz-series
2		 Automotive Rectifier Diodes
bsh102
2 3 4 5 6 7 8 9 10 11 12		 NXP SEMICONDUCTORS N-channel enhancement mode MOS transistor
bsh104
2 3 4 5 6 7 8		 NXP SEMICONDUCTORS N-channel enhancement mode MOS transistor
bsh106
2 3 4 5 6 7		 NXP SEMICONDUCTORS N-channel enhancement mode MOS transistor
bsh107
2 3 4 5 6 7		 NXP SEMICONDUCTORS N-channel enhancement mode MOS transistor
bsh112
2 3 4 5 6 7 8 9 10 11 12 13		 NXP SEMICONDUCTORS N-channel enhancement mode field-effect transistor
bsh206
2 3 4 5 6 7		 NXP SEMICONDUCTORS P-channel enhancement mode MOS transistor
bsh299
2 3 4 5 6 7 8 9 10 11 12		 NXP SEMICONDUCTORS P-channel enhancement mode MOS transistor
bsh301
2 3 4 5		 NXP SEMICONDUCTORS Dual N-channel enhancement mode MOS transistor
bsm111ar(c)
2 3 4 5 6 7		 TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 100V V(BR)DSS | 200A I(D)
bsm121
 TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D)
bsm121ar(c)
 TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D)
bsm181(c)
2 3 4 5 6 7		 TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 36A I(D)