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參數(shù)資料
| 型號(hào)： | BRY55-30THRU600 |
| 英文描述： | Super Fast Rectifier Diodes |
| 中文描述： | 可控硅0.8安培RMS的30至600伏 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | BRY55-30THRU600 |
2
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
75
°
C/W
Thermal Resistance, Junction to Ambient
200
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C, RGK = 1000
unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Peak Forward Blocking Current
(VD = Rated VDRM @ TC = 125
°
C)
IDRM
—
100
μ
A
Peak Reverse Blocking Current
(VR = Rated VRRM @ TC = 125
°
C)
Forward “On” Voltage(1)
(ITM = 1 A Peak @ TA = 25
°
C)
Gate Trigger Current (Continuous dc)(2)
(Anode Voltage = 7 Vdc, RL = 100 Ohms)
IRRM
—
100
μ
A
VTM
—
1.7
Volts
TC = 25
°
C
IGT
—
200
μ
A
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 7 Vdc, RL = 100 Ohms)
(Anode Voltage = Rated VDRM, RL = 100 Ohms)
TC = 25
°
C
TC = –40
°
C
TC = 125
°
C
TC = 25
°
C
TC = –40
°
C
VGT
—
—
0.1
0.8
1.2
—
Volts
Holding Current
(Anode Voltage = 7 Vdc, initiating current = 20 mA)
IH
—
—
5
10
mA
1. Forward current applied for 1 ms maximum duration, duty cycle
2. RGK current is not included in measurement.
3. MARKING: BRY55-30
=
BRY55-1
BRY55-60
=
BRY55-2
BRY55-100 =
BRY55-3
BRY55-200 =
BRY55-4
BRY55-400 =
BRY55-6
BRY55-500 =
BRY55-7
BRY55-600 =
BRY55-8
1%.
°
C
°
T
T
C
180
60
90
α
60
120
180
0.4
50
60
70
80
90
100
110
120
0
0.1
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
0.3
0.2
FIGURE 1 — CURRENT DERATING
(REFERENCE: CASE TEMPERATURE)
130
0.5
α
= 30
90
dc
CASE MEASUREMENT
POINT — CENTER OF
FLAT PORTION
α
= CONDUCTION ANGLE
TYPICAL PRINTED
CIRCUIT BOARD
MOUNTING
FIGURE 2 — CURRENT DERATING
(REFERENCE: AMBIENT TEMPERATURE)
30
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
0.4
0
0.1
0.3
0.2
α
α
α
= CONDUCTION ANGLE
α
= 30
120
50
70
90
110
130
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